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参数资料
| 型号： | M58WR064KU70ZA6U |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44 |
| 封装： | 7.50 X 5 MM, 0.50 MM PITCH, ROHS COMPLIANT, VFBGA-44 |
| 文件页数： | 58/122页 |
| 文件大小： | 2187K |
| 代理商： | M58WR064KU70ZA6U |
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Status register
M58WRxxxKU, M58WRxxxKL
7.6
Program suspend status bit (SR2)
The program suspend status bit indicates that a program operation has been suspended in
the addressed block. When the program suspend status bit is High (set to ‘1’), a
Program/Erase Suspend command has been issued and the memory is waiting for a
Program/Erase Resume command. The program suspend status should only be considered
valid when the program/erase controller status bit is High (program/erase controller
inactive). SR2 is set within the program suspend latency time of the Program/Erase
Suspend command being issued; therefore, the memory may still complete the operation
rather than entering suspend mode.
When a Program/Erase Resume command is issued the program suspend status bit returns
Low.
7.7
Block protection status bit (SR1)
The block protection status bit identifies if a program or block erase operation has tried to
modify the contents of a locked block.
When the block protection status bit is High (set to ‘1’), a program or erase operation has
been attempted on a locked block.
Once set High, the block protection status bit can only be reset Low by a Clear Status
Register command or a hardware reset. If set High it should be reset before a new
command is issued, otherwise the new command appears to fail.
7.8
Bank write/multiple word program status bit (SR0)
The bank write status bit indicates whether the addressed bank is programming or erasing.
In enhanced factory program mode the multiple word program bit shows if a word has
finished programming or verifying depending on the phase. The bank write status bit should
only be considered valid when the program/erase controller status SR7 is Low (set to ‘0’).
When both the program/erase controller status bit and the bank write status bit are Low (set
to ‘0’), the addressed bank is executing a program or erase operation. When the
program/erase controller status bit is Low (set to ‘0’) and the bank write status bit is High (set
to ‘1’), a program or erase operation is being executed in a bank other than the one being
addressed.
In Enhanced Factory Program mode if Multiple Word Program Status bit is Low (set to ‘0’),
the device is ready for the next word, if the Multiple Word Program Status bit is High (set
to ‘1’) the device is not ready for the next word.
Note:
Refer to Appendix C: Flowcharts and pseudocodes for using the status register.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M58WR064T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T100ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T70ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR064T85ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory |
| M58WR128EB | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
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