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| 型号： | MRF89XAT-I/MQ |
| 厂商： | Microchip Technology |
| 文件页数： | 17/140页 |
| 文件大小： | 0K |
| 描述： | RF ISM BAND TXRX 32 QFN |
| 标准包装： | 1 |
| 频率： | 863MHz ~ 870MHz，902MHz ~ 928MHz，950MHz ~ 960MHz |
| 数据传输率 - 最大： | 200kbps |
| 调制或协议： | FSK，OOK |
| 应用： | ISM |
| 功率 - 输出： | 12.5dBm |
| 灵敏度： | -113dBm |
| 电源电压： | 2.1 V ~ 3.6 V |
| 电流 - 接收： | 3mA |
| 电流 - 传输： | 25mA |
| 数据接口： | PCB，表面贴装 |
| 存储容量： | * |
| 天线连接器： | PCB，表面贴装 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 32-WFQFN 裸露焊盘 |
| 包装： | 标准包装 |
| 其它名称： | MRF89XAT-I/MQDKR |
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MRF89XA
2.5.2
CLKOUT OUTPUT PIN (CLKOUT)
2.5.3.1
PLL Lock Pin (PLOCK)
The transceiver can provide a clock signal through the
CLKOUT pin (pin 19) to the microcontroller for accurate
timing, thereby eliminating the need for a second
crystal. This results in reducing the component count.
The CLKOUT is a sub-multiple of the reference
frequency and is programmable.
The two main functions of the CLKOUT output are:
? To provide a clock output for a host
microcontroller, thus saving the cost of an
additional oscillator.
? To provide an oscillator reference output.
Measurement of the CLKOUT signal enables
simple software trimming of the initial crystal
tolerance.
Note: To minimize the current consumption of
the MRF89XA, ensure that the CLKOUT
signal is disabled when unused.
CLKOUT can be made available in any operation
mode, except Sleep mode, and is automatically
enabled at power-up.
2.5.3 PHASE-LOCKED LOOP
ARCHITECTURE
The Integer-N Phase-Locked Loop (PLL) circuitry
determines the operating frequency of the device. The
The MRF89XA features a PLL lock (PLOCK) detect
indicator. This is useful for optimizing power consump-
tion, by adjusting the synthesizer wake-up time. The
lock status can also be read on the LSTSPLL bit from
the FTPRIREG register ( Register 2-15 ), and must be
cleared by writing a ‘ 1 ’ to this same register. The lock
status is available on the PLOCK pin (pin 23), by setting
the LENPLL bit in the FTPRIREG register.
2.5.4 VOLTAGE CONTROLLED
OSCILLATOR
The integrated Voltage Controlled Oscillator (VCO)
requires two external tank circuit inductors. As the input
is differential, the two inductors must have the same
nominal value. The performance of these components
are essential for both the phase noise and the power
consumption of the PLL. It is recommended that a pair
of high Q inductors is selected. These should be
mounted orthogonally to other inductors in the circuit
(in particular the PA choke) to reduce spurious coupling
between the PA and VCO. For best performance, wire
wound high-Q inductors with tight tolerance should be
used as described in Section 4.0, Application Details .
In addition, such measures may reduce radiated pulling
effects and undesirable transient behavior, thus mini-
mizing spectral occupancy.
PLL maintains accuracy using the crystal-controlled
reference oscillator and provides maximum flexibility in
performance to the designers.
Note:
Ensuring a symmetrical layout of the VCO
inductors will further improve PLL spectral
purity.
The high resolution of the PLL allows the use of
multiple channels in any of the bands. The on-chip PLL
is capable of performing manual and automatic
calibration to compensate for the changes in
temperature or operating voltage.
The output signal of the VCO is used as the input to the
local oscillator (LO) generator stage, as illustrated in
Figure 2-5 .The VCO frequency is subdivided and used
in a series of up/down conversions for transmission/
reception.
FIGURE 2-5:
LO VCO OUTPUT GENERATOR
LO1 RX
÷ 8
I
LO2 RX
Receiver
LOs
LO
VCO Output
90o
Q
I
LO1 TX
÷ 8
90o
90o
Q
I
Q
LO2 TX
Transmitter
LOs
? 2010–2011 Microchip Technology Inc.
Preliminary
DS70622C-page 17
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相关代理商/技术参数 |
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| MRF8HP21080HR3 | 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 160W NI780H-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8HP21080HR5 | 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 160W NI780H-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8HP21080HSR3 | 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 160W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8HP21080HSR5 | 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 160W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF8HP21130HR3 | 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 130W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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