参数资料
型号: MT46V32M8BG-6AT:G
元件分类: DRAM
英文描述: 32M X 8 DDR DRAM, 0.7 ns, PBGA60
封装: (8 X 14) MM, LEAD FREE,PLASTIC, FBGA-60
文件页数: 19/93页
文件大小: 3632K
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
24
2003 Micron Technology, Inc. All rights reserved.
256Mb: x4, x8, x16 DDR SDRAM
Electrical Specifications – DC and AC
Write recovery time
tWR
15
ns
Internal WRITE-to-READ command delay
tWTR
2
tCK
Exit SELF REFRESH-to-non-READ command
tXSNR
70
ns
Exit SELF REFRESH-to-READ command
tXSRD
200
tCK
Data valid output window
n/a
tQH - tDQSQ
ns
Table 18:
Electrical Characteristics and Recommended AC Operating Conditions (-5B) (continued)
Notes 1–6, 16–18, 34 apply to the entire table; Notes appear on page 35;
0°C
≤ T
A ≤ +70°C; VDDQ = +2.6V ±0.1V, VDD = +2.6V ±0.1V
AC Characteristics
-5B
Units
Notes
Parameter
Symbol
Min
Max
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