- 您现在的位置：买卖IC网 > PDF目录229297 > MT46V32M8BG-6AT:G 32M X 8 DDR DRAM, 0.7 ns, PBGA60 PDF资料下载
参数资料
| 型号： | MT46V32M8BG-6AT:G |
| 元件分类： | DRAM |
| 英文描述： | 32M X 8 DDR DRAM, 0.7 ns, PBGA60 |
| 封装： | (8 X 14) MM, LEAD FREE,PLASTIC, FBGA-60 |
| 文件页数： | 35/93页 |
| 文件大小： | 3632K |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页当前第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页第75页第76页第77页第78页第79页第80页第81页第82页第83页第84页第85页第86页第87页第88页第89页第90页第91页第92页第93页
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
38
2003 Micron Technology, Inc. All rights reserved.
256Mb: x4, x8, x16 DDR SDRAM
Electrical Specifications – DC and AC
38c. The full driver pull-up current variation from MIN to MAX process; temperature
and voltage will lie within the outer bounding lines of the V-I curve of Figure 14 on
38d. The driver pull-up current variation within nominal limits of voltage and temper-
ature is expected, but not guaranteed, to lie within the inner bounding lines of the
V-I curve of Figure 14 on page 38.
38e. The full ratio variation of MAX to MIN pull-up and pull-down current should be
between 0.71 and 1.4 for drain-to-source voltages from 0.1V to 1.0V at the same
voltage and temperature.
38f. The full ratio variation of the nominal pull-up to pull-down current should be
unity ±10% for device drain-to-source voltages from 0.1V to 1.0V.
Figure 13:
Full Drive Pull-Down Characteristics
Figure 14:
Full Drive Pull-Up Characteristics
39. Reduced output drive curves:
39a. The full driver pull-down current variation from MIN to MAX process; tempera-
ture and voltage will lie within the outer bounding lines of the V-I curve of
39b. The driver pull-down current variation, within nominal voltage and temperature
limits, is expected, but not guaranteed, to lie within the inner bounding lines of
the V-I curve of Figure 15 on page 39.
39c. The full driver pull-up current variation from MIN to MAX process; temperature
and voltage will lie within the outer bounding lines of the V-I curve of Figure 16.
0
20
40
60
80
100
120
140
160
0.0
0.5
1.0
1.5
2.0
2.5
IOUT
(mA)
VOUT (V)
-200
-180
-160
-140
-120
-100
-80
-60
-40
-20
0
0.0
0.5
1.0
1.5
2.0
2.5
IOUT
(mA)
VDDQ - VOUT (V)
相关PDF资料 |
PDF描述 |
|---|---|
| M29F800FB55N3E2 | 512K X 16 FLASH 5V PROM, 55 ns, PDSO48 |
| MC12L1NZGF | ROTARY SWITCH-12POSITIONS, SP12T, LATCHED, 0.25A, 28VDC, PANEL MOUNT-THREADED |
| MD00S1NCQF | ROTARY SWITCH-6POSITIONS, DP6T, LATCHED, 0.25A, 28VDC, THROUGH HOLE-STRAIGHT |
| MD06L1NZGD | ROTARY SWITCH-6POSITIONS, DP6T, LATCHED, 0.25A, 28VDC, PANEL MOUNT-THREADED |
| MD06L2NCQD | ROTARY SWITCH-6POSITIONS, DP6T, LATCHED, 0.25A, 28VDC, THROUGH HOLE-STRAIGHT |
相关代理商/技术参数 |
参数描述 |
|---|
发布紧急采购，3分钟左右您将得到回复。