参数资料
型号: MT46V32M8BG-6AT:G
元件分类: DRAM
英文描述: 32M X 8 DDR DRAM, 0.7 ns, PBGA60
封装: (8 X 14) MM, LEAD FREE,PLASTIC, FBGA-60
文件页数: 58/93页
文件大小: 3632K
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
59
2003 Micron Technology, Inc. All rights reserved.
256Mb: x4, x8, x16 DDR SDRAM
Operations
Figure 25:
Extended Mode Register Definition
Notes:
1. n is the most significant row address bit from Table 2 on page 2.
2. The reduced drive strength option is available only on Design Revision F and K.
3. The QFC# option is not supported.
ACTIVE
After a row is opened with an ACTIVE command, a READ or WRITE command may be
issued to that row, subject to the tRCD specification. tRCD (MIN) should be divided by
the clock period and rounded up to the next whole number to determine the earliest
clock edge after the ACTIVE command on which a READ or WRITE command can be
entered. For example, a tRCD specification of 20ns with a 133 MHz clock (7.5ns period)
results in 2.7 clocks rounded to 3. This is reflected in Figure 26 on page 60, which covers
any case where 2 < tRCD (MIN)/tCK ≤ 3 (Figure 26 also shows the same case for tRRD; the
same procedure is used to convert other specification limits from time units to clock
cycles).
A row remains active (or open) for accesses until a PRECHARGE command is issued to
that bank. A PRECHARGE command must be issued before opening a different row in
the same bank.
A subsequent ACTIVE command to a different row in the same bank can only be issued
after the previous active row has been “closed” (precharged). The minimum time
interval between successive ACTIVE commands to the same bank is defined by tRC.
A subsequent ACTIVE command to another bank can be issued while the first bank is
being accessed, which results in a reduction of total row-access overhead. The minimum
time interval between successive ACTIVE commands to different banks is defined by
tRRD.
Operating Mode
Reserved
E3
0
E4
0
E1, E0
Valid
DLL
Enable
Disable
A9
A7 A6 A5 A4 A3
A8
A2 A1 A0
Extended mode
register (Ex)
Address bus
97
6
5
4
3
8
21
0
1
E0
0
1
Drive Strength
Normal
Reduced
E1
2
Operating Mode
. . .
An
BA1
BA0
. . .
n1
n + 1
n + 2
E6
0
E7
0
E8
0
E9
0
E5
0
. . .
0
En
0
DS
E2
3
0
Mn + 1
0
1
0
1
Mode Register Definition
Base mode register
Extended mode register
Reserved
Mn + 2
0
1
DLL
0
1
0
相关PDF资料
PDF描述
M29F800FB55N3E2 512K X 16 FLASH 5V PROM, 55 ns, PDSO48
MC12L1NZGF ROTARY SWITCH-12POSITIONS, SP12T, LATCHED, 0.25A, 28VDC, PANEL MOUNT-THREADED
MD00S1NCQF ROTARY SWITCH-6POSITIONS, DP6T, LATCHED, 0.25A, 28VDC, THROUGH HOLE-STRAIGHT
MD06L1NZGD ROTARY SWITCH-6POSITIONS, DP6T, LATCHED, 0.25A, 28VDC, PANEL MOUNT-THREADED
MD06L2NCQD ROTARY SWITCH-6POSITIONS, DP6T, LATCHED, 0.25A, 28VDC, THROUGH HOLE-STRAIGHT
相关代理商/技术参数
参数描述