参数资料
型号: MT46V32M8BG-6AT:G
元件分类: DRAM
英文描述: 32M X 8 DDR DRAM, 0.7 ns, PBGA60
封装: (8 X 14) MM, LEAD FREE,PLASTIC, FBGA-60
文件页数: 78/93页
文件大小: 3632K
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb_DDR_x4x8x16_D2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
8
2003 Micron Technology, Inc. All rights reserved.
256Mb: x4, x8, x16 DDR SDRAM
Functional Block Diagrams
The 256Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory
containing 268,435,456 bits. It is internally configured as a 4-bank DRAM.
Figure 3:
64 Meg x 4 Functional Block Diagram
13
RAS#
CAS#
Row-
address
MUX
CK
CS#
WE#
CK#
11
A0–A12,
BA0, BA1
CKE
13
15
1024
(x8)
8192
15
13
10
1
2
4
1
8
2
8
CK
out
DQS
CK
in
MUX
4
8
DQ0–DQ3
DQS
DM
1
WRITE
FIFO
and
drivers
Control
logic
Mode registers
Command
decode
Refresh
counter
Address
register
Bank
control
logic
Column-
address
counter/
latch
Column
decoder
I/O gating
DM mask logic
Bank 0
row-
address
latch
and
decoder
Bank 0
memory
array
(8,192 x 1,024 x 8)
Sense amplifiers
Bank 1
Bank 2
Bank 3
READ
latch
Data
CK
DLL
Drivers
DQS
generator
Input
registers
Rcvrs
Data
Mask
Column 0
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