参数资料
型号: MT46V32M8BG-6AT:G
元件分类: DRAM
英文描述: 32M X 8 DDR DRAM, 0.7 ns, PBGA60
封装: (8 X 14) MM, LEAD FREE,PLASTIC, FBGA-60
文件页数: 30/93页
文件大小: 3632K
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
34
2003 Micron Technology, Inc. All rights reserved.
256Mb: x4, x8, x16 DDR SDRAM
Electrical Specifications – DC and AC
DQS write postamble
tWPST
0.4
0.6
tCK
Write recovery time
tWR
15
ns
Internal WRITE-to-READ command delay
tWTR
1
tCK
Exit SELF REFRESH-to-non-READ command
tXSNR
75
ns
Exit SELF REFRESH-to-READ command
tXSRD
200
tCK
Data valid output window
n/a
tQH - tDQSQ
ns
Table 24:
Input Slew Rate Derating Values for Addresses and Commands
Note: 15 applies to the entire table; Notes appear on page 35;
0°C
≤ T
A ≤ +70°C; VDDQ = +2.5V ±0.2V, VDD = +2.5V ±0.2V
Speed
Slew Rate
tIS
tIH
Units
-75Z/-75E
0.500 V/ns
1.00
1
ns
-75Z/-75E
0.400 V/ns
1.05
1
ns
-75Z/-75E
0.300 V/ns
1.10
1
ns
Table 25:
Input Slew Rate Derating Values for DQ, DQS, and DM
Note: 32 applies to the entire table; Notes appear on page 35;
0°C
≤ T
A ≤ +70°C; VDDQ = +2.5V ±0.2V, VDD = +2.5V ±0.2V
Speed
Slew Rate
tDS
tDH
Units
-75Z/-75E
0.500 V/ns
0.50
ns
-75Z/-75E
0.400 V/ns
0.55
ns
-75Z/-75E
0.300 V/ns
0.60
ns
Table 23:
Electrical Characteristics and Recommended AC Operating Conditions (-75) (continued)
Notes: 1–6, 16–18, 34 apply to the entire table; Notes appear on page 35;
0°C
≤ T
A ≤ +70°C; VDDQ = +2.5V ±0.2V, VDD = +2.5V ±0.2V
AC Characteristics
-75
Units
Notes
Parameter
Symbol
Min
Max
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