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参数资料
| 型号： | S29CD032G0RFFN003 |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | 1M X 32 FLASH 2.7V PROM, 48 ns, PBGA80 |
| 封装： | 13 X 11 MM, 1 MM PITCH, LEAD FREE, FORTIFIED, BGA-80 |
| 文件页数： | 23/81页 |
| 文件大小： | 1276K |
| 代理商： | S29CD032G0RFFN003 |
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This document states the current technical specifications regarding the Spansion product(s) described herein. The Preliminary status of this document indicates that product qual-
ification has been completed, and that initial production has begun. Due to the phases of the manufacturing process that require maintaining efficiency and quality, this document
may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication Number S29CD-G_00
Revision B
Amendment 1
Issue Date March 3, 2009
This product family has been retired and is not recommended for designs. For new and current designs, the S29CD016J and
S29CD032J supercede S29CD016G and S29CD032G respectively. This is the factory-recommended migration path. Please
refer to the S29CD-J data sheet for specifications and ordering information. Availability of this document is retained for
reference and historical purposes only.
Distinctive Characteristics
Architecture Advantages
Simultaneous Read/Write Operations
– Read data from one bank while executing erase/program functions
in other bank
– Zero latency between read and write operations
– Two bank architecture: large bank/small bank 75% / 25%
User-Defined x32 Data Bus
Dual Boot Block
– Top and bottom boot sectors in the same device
Flexible Sector Architecture
– CD032G: Eight 2K Double Word, Sixty-two 16K Double Word, and
Eight 2K Double Word sectors
– CD016G: Eight 2K Double Word, Thirty-two 16K Double Word, and
Eight 2K Double Word sectors
Secured Silicon Sector (256 Bytes)
– Factory locked and identifiable: 16 bytes for secure, random factory
Electronic Serial Number; Also know as Electronic Marking
Manufactured on 170 nm Process Technology
Programmable Burst Interface
– Interfaces to any high performance processor
– Linear Burst Read Operation: 2, 4, and 8 double word linear burst
with or without wrap around
Program Operation
– Performs synchronous and asynchronous write operations of burst
configuration register settings independently
Single Power Supply Operation
– Optimized for 2.5 to 2.75 volt read, erase, and program operations
Compatibility with JEDEC standards (JC42.4)
– Software compatible with single-power supply Flash
– Backward-compatible with AMD/Fujitsu Am29LV/MBM29LV and
Am29F/MBM29F flash memories
Performance Characteristics
High Performance Read Access
– Initial/random access times of 48 ns (32 Mb) and 54 ns (16 Mb)
– Burst access times of 7.5 ns (32 Mb) or 9 ns (16Mb)
Ultra Low Power Consumption
– Burst Mode Read: 90 mA @ 75 MHz max
– Program/Erase: 50 mA max
– Standby mode: CMOS: 60 A max
1 million write cycles per sector typical
20 year data retention typical
VersatileI/O Control
– Generates data output voltages and tolerates data input voltages as
determined by the voltage on the VIO pin
– 1.65 V to 3.60 V compatible I/O signals
Software Features
Persistent Sector Protection
– Locks combinations of individual sectors and sector groups to
prevent program or erase operations within that sector (requires
only VCC levels)
Password Sector Protection
– Locks combinations of individual sectors and sector groups to
prevent program or erase operations within that sector using a user-
definable 64-bit password
Supports Common Flash Interface (CFI)
Unlock Bypass Program Command
– Reduces overall programming time when issuing multiple program
command sequences
Data# Polling and Toggle Bits
– Provides a software method of detecting program or erase operation
completion
Hardware Features
Program Suspend/Resume & Erase Suspend/Resume
– Suspends program or erase operations to allow reading,
programming, or erasing in same bank
Hardware Reset (RESET#), Ready/Busy# (RY/BY#), and Write
Protect (WP#) Inputs
ACC Input
– Accelerates programming time for higher throughput during system
production
Package Options
– 80-pin PQFP
– 80-ball Fortified BGA
– Pb-free package option also available
– Known Good Die
S29CD-G Flash Family
S29CD032G, S29CD016G
32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit)
2.5 Volt-only Burst Mode, Dual Boot,
Simultaneous Read/Write Flash Memory
with VersatileI/O featuring 170 nm Process Technology
Data Sheet (Preliminary)
相关PDF资料 |
PDF描述 |
|---|---|
| S29CD032G0RQFI012 | 1M X 32 FLASH 2.7V PROM, 48 ns, PQFP80 |
| S29CL032J0JFAM020 | 1M X 32 FLASH 3.3V PROM, 54 ns, PBGA80 |
| S29CL032J0JFFM020 | 1M X 32 FLASH 3.3V PROM, 54 ns, PBGA80 |
| S29CL032J0RFAM012 | 1M X 32 FLASH 3.3V PROM, 48 ns, PBGA80 |
| S29GL032A10TAIR11 | Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 3.3pF; Working Voltage (Vdc)[max]: 500V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Solder (SnPb) Plated Nickel Barrier; Body Dimensions: 0.079" x 0.049"; Container: Bulk; Features: High Voltage; Unmarked |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S29CD032J0MQAN010 | 制造商:Spansion 功能描述: |
| S29CD032J0MQFM010U | 制造商:Spansion 功能描述:N/A - Trays |
| S29CD032J0PFAM010 | 制造商:Spansion 功能描述: |
| S29CD032J0PQFI010 | 制造商:Spansion 功能描述:AUTO 3.3V 512KX32 FLASH - Trays |
| S29CL016J0JQFM030 | 制造商:Spansion 功能描述:FLASH PARALLEL 3.3V 16MBIT 512KX32 54NS 80PQFP - Trays |
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