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参数资料
| 型号： | S29CD032G0RFFN003 |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | 1M X 32 FLASH 2.7V PROM, 48 ns, PBGA80 |
| 封装： | 13 X 11 MM, 1 MM PITCH, LEAD FREE, FORTIFIED, BGA-80 |
| 文件页数： | 34/81页 |
| 文件大小： | 1276K |
| 代理商： | S29CD032G0RFFN003 |
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S29CD-G Flash Family
S29CD-G_00_B1 March 3, 2009
Data
Sheet
(Pre limin ar y)
General Description
The S29CD-G Flash Family is a burst mode, Dual Boot, Simultaneous Read/Write family of Flash Memory
with VersatileI/O manufactured on 170 nm Process Technology.
The S29CD032G is a 32 Megabit, 2.6 Volt-only (2.50 V - 2.75 V) single power supply burst mode flash
memory device that can be configured for 1,048,576 double words.
The S29CD016G is a 16 Megabit, 2.6 Volt-only (2.50 V - 2.75 V) single power supply burst mode flash
memory device that can be configured for 524,288 double words.
To eliminate bus contention, each device has separate chip enable (CE#), write enable (WE#) and output
enable (OE#) controls. Additional control inputs are required for synchronous burst operations: Load Burst
Address Valid (ADV#), and Clock (CLK).
Each device requires only a single 2.6 Volt-only (2.50 V – 2.75 V) for both read and write functions. A 12.0-
volt VPP is not required for program or erase operations, although an acceleration pin is available if faster
programming performance is required.
The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. The
software command set is compatible with the command sets of the 5 V Am29F or MBM29F and 3 V Am29LV
or MBM29LV Flash families. Commands are written to the command register using standard microprocessor
write timing. Register contents serve as inputs to an internal state-machine that controls the erase and
programming circuitry. Write cycles also internally latch addresses and data needed for the programming and
erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices.
The Unlock Bypass mode facilitates faster programming times by requiring only two write cycles to program
data instead of four.
The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space
into two banks. The device can begin programming or erasing in one bank, and then simultaneously read
from the other bank, with zero latency. This releases the system from waiting for the completion of program or
erase operations. See Simultaneous Read/Write Operations Overview on page 23.
The device provides a 256-byte Secured Silicon Sector that contains Electronic Marking Information for
easy device traceability.
In addition, the device features several levels of sector protection, which can disable both the program and
erase operations in certain sectors or sector groups: Persistent Sector Protection is a command sector
protection method that replaces the old 12 V controlled protection method; Password Sector Protection is a
highly sophisticated protection method that requires a password before changes to certain sectors or sector
groups are permitted; WP# Hardware Protection prevents program or erase in the two outermost 8 Kbytes
sectors of the larger bank.
The device defaults to the Persistent Sector Protection mode. The customer must then choose if the
Standard or Password Protection method is most desirable. The WP# Hardware Protection feature is always
available, independent of the other protection method chosen.
The VersatileI/O (VCCQ) feature allows the output voltage generated on the device to be determined based
on the VIO level. This feature allows this device to operate in the 1.8 V I/O environment, driving and receiving
signals to and from other 1.8 V devices on the same bus.
The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin,
by reading the DQ7 (Data# Polling), or DQ6 (toggle) status bits. After a program or erase cycle is completed,
the device is ready to read array data or accept another command.
The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully erased when shipped from the factory.
Hardware data protection measures include a low VCC detector that automatically inhibits write operations
during power transitions. The password and software sector protection feature disables both program and
erase operations in any combination of sectors of memory. This can be achieved in-system at VCC level.
The Program/Erase Suspend/Erase Resume feature enables the user to put erase on hold for any period of
time to read data from, or program data to, any sector that is not selected for erasure. True background erase
can thus be achieved.
The hardware RESET# pin terminates any operation in progress and resets the internal state machine to
reading array data.
相关PDF资料 |
PDF描述 |
|---|---|
| S29CD032G0RQFI012 | 1M X 32 FLASH 2.7V PROM, 48 ns, PQFP80 |
| S29CL032J0JFAM020 | 1M X 32 FLASH 3.3V PROM, 54 ns, PBGA80 |
| S29CL032J0JFFM020 | 1M X 32 FLASH 3.3V PROM, 54 ns, PBGA80 |
| S29CL032J0RFAM012 | 1M X 32 FLASH 3.3V PROM, 48 ns, PBGA80 |
| S29GL032A10TAIR11 | Ceramic Chip Capacitors / High Voltage; Capacitance [nom]: 3.3pF; Working Voltage (Vdc)[max]: 500V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: C0G (NP0); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: Solder (SnPb) Plated Nickel Barrier; Body Dimensions: 0.079" x 0.049"; Container: Bulk; Features: High Voltage; Unmarked |
相关代理商/技术参数 |
参数描述 |
|---|---|
| S29CD032J0MQAN010 | 制造商:Spansion 功能描述: |
| S29CD032J0MQFM010U | 制造商:Spansion 功能描述:N/A - Trays |
| S29CD032J0PFAM010 | 制造商:Spansion 功能描述: |
| S29CD032J0PQFI010 | 制造商:Spansion 功能描述:AUTO 3.3V 512KX32 FLASH - Trays |
| S29CL016J0JQFM030 | 制造商:Spansion 功能描述:FLASH PARALLEL 3.3V 16MBIT 512KX32 54NS 80PQFP - Trays |
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