February 25, 2004 S71JLxxxHxx_00A1
S29JL064H
37
Pre l i m i n a r y
S29JL064H
For Multi-Chip Products (MCP)
64 Megabit (8 M x 8-Bit/4 M x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous Read/Write
Flash Memory
Distinctive Characteristics
Architectural Advantages
Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in another bank.
— Zero latency between read and write operations
Flexible Bank architecture
— Read may occur in any of the three banks not being
written or erased.
— Four banks may be grouped by customer to achieve
desired bank divisions.
Boot Sectors
— Top and bottom boot sectors in the same device
— Any combination of sectors can be erased
Manufactured on 130 nm process technology
SecSi (Secured Silicon) Sector: Extra 256 Byte
sector
— Factory locked and identifiable: 16 bytes available
for secure, random factory Electronic Serial
Number; verifiable as factory locked through
autoselect function.
— Customer lockable: One-time programmable only.
Once locked, data cannot be changed
Zero Power Operation
— Sophisticated power management circuits reduce
power consumed during inactive periods to nearly
zero.
Compatible with JEDEC standards
— Pinout and software compatible with single-power-
supply flash standard
Performance Characteristics
High performance
— Access time as fast as 55 ns
— Program time: 4 s/word typical using accelerated
programming function
Ultra low power consumption (typical values)
— 2 mA active read current at 1 MHz
— 10 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
Cycling Endurance: 1 million cycles per sector
typical
Data Retention: 20 years typical
Software Features
Supports Common Flash Memory Interface (CFI)
Erase Suspend/Erase Resume
— Suspends erase operations to read data from, or
program data to, a sector that is not being erased,
then resumes the erase operation.
Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
Hardware Features
Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase
cycle completion
Hardware reset pin (RESET#)
— Hardware method of resetting the internal state
machine to the read mode
WP#/ACC input pin
— Write protect (WP#) function protects sectors 0, 1,
140, and 141, regardless of sector protect status
— Acceleration (ACC) function accelerates program
timing
Sector protection
— Hardware method to prevent any program or erase
operation within a sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system