参数资料
型号: S71JL064H80BFI122
厂商: ADVANCED MICRO DEVICES INC
元件分类: 存储器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA73
封装: 11.60 X 8 MM, FBGA-73
文件页数: 65/95页
文件大小: 2244K
代理商: S71JL064H80BFI122
68
S29JL064H
S71JLxxxHxx_00A1 February 25, 2004
Pr el i m i n ary
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin which indicates whether an
Embedded Algorithm is in progress or complete. The RY/BY# status is valid after
the rising edge of the final WE# pulse in the command sequence. Since RY/BY#
is an open-drain output, several RY/BY# pins can be tied together in parallel with
a pull-up resistor to VCC.
If the output is low (Busy), the device is actively erasing or programming. (This
includes programming in the Erase Suspend mode.) If the output is high (Ready),
the device is in the read mode, the standby mode, or one of the banks is in the
erase-suspend-read mode.
Table 12 shows the outputs for RY/BY#.
Notes:
1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within
the sector being erased. During chip erase, a valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5.
Figure 6. Data# Polling Algorithm
DQ7 = Data?
Yes
No
DQ5 = 1?
No
Yes
FAIL
PASS
Read DQ7–DQ0
Addr = VA
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
START
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