- 您现在的位置：买卖IC网 > PDF目录385639 > MT48LC1M16A1S (Micron Technology, Inc.) SYNCHRONOUS DRAM PDF资料下载
参数资料
| 型号： | MT48LC1M16A1S |
| 厂商： | Micron Technology, Inc. |
| 英文描述： | SYNCHRONOUS DRAM |
| 中文描述： | 同步DRAM |
| 文件页数： | 24/51页 |
| 文件大小： | 1480K |
| 代理商： | MT48LC1M16A1S |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页当前第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页
16Mb: x16 SDRAM
16MSDRAMx16.p65
–
Rev. 8/99
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1999, Micron Technology, Inc.
24
16Mb: x16
SDRAM
CLK
DQ
T2
T1
T4
T3
T6
T5
T0
COMMAND
WRITE - AP
BANK
n
NOP
NOP
NOP
NOP
D
IN
a
+ 1
D
IN
a
NOP
NOP
T7
BANK
n
BANK
m
ADDRESS
NOTE:
1. DQM is LOW.
BANK
n
,
COL
a
BANK
m
,
COL
d
READ - AP
BANK
m
Internal
States
t
Page Active
WRITE with Burst of 4
Interrupt Burst, Write-Back
Precharge
Page Active
READ with Burst of 4
t
tRP - BANK
m
D
OUT
d
D
OUT
d
+ 1
CAS Latency = 3 (BANK
m
)
RP - BANK
n
WR - BANK
n
Figure 26
WRITE w ith AUTO PRECHARGE Interrupted by a READ
DON
’
T CARE
CLK
DQ
T2
T1
T4
T3
T6
T5
T0
COMMAND
WRITE - AP
BANK
n
NOP
NOP
NOP
NOP
D
IN
d
+ 1
D
IN
d
D
IN
a
+ 1
D
IN
a
+ 2
D
IN
a
D
IN
d
+ 2
D
IN
d
+ 3
NOP
T7
BANK
n
BANK
m
ADDRESS
NOP
NOTE:
1. DQM is LOW.
BANK
n
,
COL
a
BANK
m
,
COL
d
WRITE - AP
BANK
m
Internal
States
t
Page Active
WRITE with Burst of 4
Interrupt Burst, Write-Back
Precharge
Page Active
WRITE with Burst of 4
Write-Back
WR - BANK
n
tRP - BANK
n
tWR - BANK
m
Figure 27
WRITE w ith AUTO PRECHARGE Interrupted by a WRITE
WRITE with AUTO PRECHARGE
3. Interrupted by a READ (with or without AUTO
PRECHARGE): A READ to bank m will interrupt a
WRITE on bank n when registered, with the data-
out appearing CAS latency later. The PRECHARGE
to bank n will begin after
t
WR is met, where
t
WR
begins when the READ to bank m is registered. The
last valid WRITE to bank n will be data-in registered
one clock prior to the READ to bank m (Figure 26).
4. Interrupted by a WRITE (with or without AUTO
PRECHARGE): A WRITE to bank m will interrupt a
WRITE on bank n when registered. The PRECHARGE
to bank n will begin after
t
WR is met, where
t
WR
begins when the WRITE to bank m is registered. The
last valid data WRITE to bank n will be data regis-
tered one clock prior to a WRITE to bank m (Figure
27).
相关PDF资料 |
PDF描述 |
|---|---|
| MT48LC2M32LFFC | 512K x 32 x 4 banks 3.3v SDRAM(3.3V,512K x 32 x 4组同步动态RAM) |
| MT48LC4M16A2 | SYNCHRONOUS DRAM |
| MT48LC16M4A2 | RSD Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 24V; Output Voltage (Vdc): 3.3V; Power: 1W; 1kVDC and 3kVDC Isolation Options; Approved for Medical Applications; Suitable for Automated Assembly; 8, 10 and 12 pin Pinning Style Options; Optional Continuous Short Circuit Protected; Efficiency to 85% |
| MT48LC8M16A2 | SYNCHRONOUS DRAM |
| MT48V2M32LFFC | 512K x 32 x 4 banks 2.5V SDRAM(2.5V,512K x 32 x 4组同步动态RAM) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MT48LC1M16A1-TG | 制造商:Micron Technology Inc 功能描述: |
| MT48LC1M16A1TG6SE | 制造商:MICRON 功能描述:New |
| MT48LC1M16A1TG-6SE | 制造商:Micron Technology Inc 功能描述:IC,SDRAM,2X512KX16,CMOS,TSOP,50PIN,PLASTIC |
| MT48LC1M16A1TG-7S | 制造商:Mitel Networks Corporation 功能描述:SDRAM, 1M x 16, 50 Pin, Plastic, TSOP |
| MT48LC1M16A1TG-7SE | 制造商:Micron Technology Inc 功能描述:SDRAM, 1M x 16, 50 Pin, Plastic, TSOP |
发布紧急采购，3分钟左右您将得到回复。