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参数资料
| 型号： | NAND08GW3B2CZL1F |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 1G X 8 FLASH 3V PROM, 25000 ns, PBGA52 |
| 封装： | 12 X 17 MM, 1 MM PITCH, LEAD FREE, LGA-52 |
| 文件页数： | 10/72页 |
| 文件大小： | 1919K |
| 代理商： | NAND08GW3B2CZL1F |
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Bus operations
NAND04G-B2D, NAND08G-BxC
4
Bus operations
There are six standard bus operations that control the memory, as described in this section.
SeeTable 5: Bus operations for a summary of these operations.
Typically, glitches of less than 5 ns on Chip Enable, Write Enable, and Read Enable are
ignored by the memory and do not affect bus operations.
4.1
Command input
Command input bus operations give commands to the memory.
Commands are accepted when Chip Enable is Low, Command Latch Enable is High,
Address Latch Enable is Low, and Read Enable is High. They are latched on the rising edge
of the Write Enable signal.
Only I/O0 to I/O7 are used to input commands.
4.2
Address input
Address input bus operations input the memory addresses. Five bus cycles are required to
input the addresses (refer to Table 6: Address insertion (x8 devices) and Table 7: Address
The addresses are accepted when Chip Enable is Low, Address Latch Enable is High,
Command Latch Enable is Low, and Read Enable is High. They are latched on the rising
edge of the Write Enable signal.
Only I/O0 to I/O7 are used to input addresses.
4.3
Data input
Data input bus operations input the data to be programmed.
Data is accepted only when Chip Enable is Low, Address Latch Enable is Low, Command
Latch Enable is Low, and Read Enable is High. The data is latched on the rising edge of the
Write Enable signal. The data is input sequentially using the Write Enable signal.
4.4
Data output
Data output bus operations read the data in the memory array, the status register, the
electronic signature, and the unique identifier.
Data is output when Chip Enable is Low, Write Enable is High, Address Latch Enable is Low,
and Command Latch Enable is Low.
The data is output sequentially using the Read Enable signal.
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| NAND08GW3C2AE01 | 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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