参数资料
型号: NAND08GW3B2CZL1F
厂商: NUMONYX
元件分类: PROM
英文描述: 1G X 8 FLASH 3V PROM, 25000 ns, PBGA52
封装: 12 X 17 MM, 1 MM PITCH, LEAD FREE, LGA-52
文件页数: 37/72页
文件大小: 1919K
代理商: NAND08GW3B2CZL1F
Device operations
NAND04G-B2D, NAND08G-BxC
Table 21.
Parameter page data structure
Byte
O/M(1)
Description
Re
vi
si
on
in
fo
rmatio
n
an
d
f
eatures
b
loc
k
0-3
M
Parameter page signature
– Byte 0: 4Fh, ‘O’
– Byte 1: 4Eh, ‘N’
– Byte 2: 46h, ‘F’
– Byte 3: 49h, ‘I’
4-5
M
Revision number
Bit 2 to bit 15
Reserved (0)
Bit 1
1 = supports ONFI version 1.0
Bit 0
Reserved (0)
6-7
M
Features supported
Bit 5 to bit 15
Reserved (0)
Bit 4
1 = supports odd to even page copy back
Bit 3
1 = supports interleaved operations
Bit 2
1 = supports non-sequential page programming
Bit 1
1 = supports multiple LUN operations
Bit 0
1 = supports 16-bit data bus width
8-9
M
Optional commands supported
Bit 6 to bit 15
Reserved (0)
Bit 5
1 = supports Read Unique ID
Bit 4
1 = supports Copy back
Bit 3
1 = supports Read Status Enhanced
Bit 2
1 = supports Get Features and Set Features
Bit 1
1 = supports Read Cache commands
Bit 0
1 = supports Page Cache Program command
10-31
Reserved (0)
M
a
n
u
fa
ctu
rer
in
fo
rm
atio
n
b
loc
k
32-43
M
Device manufacturer (12 ASCII characters)
44-63
M
Device model (20 ASCII characters)
64
M
JEDEC manufacturer ID
65-66
O
Date code
67-79
Reserved (0)
80-83
M
Number of data bytes per page
84-85
M
Number of spare bytes per page
86-89
M
Number of data bytes per partial page
90-91
M
Number of spare bytes per partial page
92-95
M
Number of pages per block
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