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参数资料
| 型号： | NAND08GW3B2CZL1F |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 1G X 8 FLASH 3V PROM, 25000 ns, PBGA52 |
| 封装： | 12 X 17 MM, 1 MM PITCH, LEAD FREE, LGA-52 |
| 文件页数： | 42/72页 |
| 文件大小： | 1919K |
| 代理商： | NAND08GW3B2CZL1F |
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NAND04G-B2D, NAND08G-BxC
Software algorithms
9.2
NAND flash memory failure modes
Over the lifetime of the device bad blocks may develop. To implement a highly reliable
system, the possible failure modes must be considered.
●
Program/erase failure
In this case, the block has to be replaced by copying the data to a valid block. These
additional bad blocks can be identified because attempts to program or erase them
gives errors in the status register. As the failure of a page program operation does not
affect the data in other pages in the same block, the block can be replaced by
reprogramming the current data and copying the rest of the replaced block to an
available valid block. The Copy Back Program command can be used to copy the data
to a valid block. See Section 6.5: Copy back program for more details.
●
Read failure
In this case, ECC correction must be implemented. To efficiently use the memory
space, the recovery of a single-bit error in read by ECC, without replacing the whole
block, is recommended.
Refer to Table 23: Block failure for the recommended procedure to follow if an error occurs
during an operation.
Figure 21.
Bad block management flowchart
Table 23.
Block failure
Operation
Procedure
Erase
Block replacement
Program
Block replacement
Read
ECC
AI07588C
START
END
NO
YES
NO
Block Address =
Block 0
Data
= FFh?
Last
block?
Increment
Block Address
Update
Bad Block table
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| NAND128W4A2CZA6E | 8M X 16 FLASH 3V PROM, 35 ns, PBGA55 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND08GW3B4BN6E | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3B4BN6F | 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel |
| NAND08GW3B4CN1F | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3B4CZL6E | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3C2AE01 | 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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