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参数资料
| 型号： | NAND08GW3B2CZL1F |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 1G X 8 FLASH 3V PROM, 25000 ns, PBGA52 |
| 封装： | 12 X 17 MM, 1 MM PITCH, LEAD FREE, LGA-52 |
| 文件页数： | 71/72页 |
| 文件大小： | 1919K |
| 代理商： | NAND08GW3B2CZL1F |
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Description
NAND04G-B2D, NAND08G-BxC
Two further features are available as options:
●
Extra non-volatile protection
●
An individual serial number that acts as an unique identifier.
More information is available, upon completion of an NDA (non-disclosure agreement), and
therefore, the details are not described in this datasheet. For more information on these two
options, contact your nearest Numonyx sales office.
The devices are available in the TSOP48 (12 x 20 mm) and LGA52 (12 x 17 mm) packages.
For information on how to order these options, refer to Table 34: Ordering information
scheme. Devices are shipped from the factory with block 0 always valid and the memory
content bits, in valid blocks, erased to ’1’.
Table 2: Product description lists the part numbers and other information for all the devices
able in the family.
Table 2.
Product description
Part number
Density
Bus
width
Page
size
Block
size
Memory
array
Operating
voltage
Timings
Package
Sequential
access
time (min)
Random
access
time (max)
Page
Program
(typ)
Block
Erase
(typ)
NAND04GR3B2D
4-Gbit
x8
2048+64
bytes
128 K+
4 K bytes
64 pages
x 4096
blocks
1.7 to
1.95 V
45 ns
25 s
200 s
1.5 ms
LGA52
NAND04GW3B2D
2.7 to
3.6 V
25 ns
TSOP48
LGA52
NAND04GR4B2D
x16
1024+ 32
words
64 K +
2 K words
1.7 to
1.95 V
45 ns
(1)
NAND04GW4B2D
2.7 to
3.6 V
25 ns
NAND08GR3B2C
8-Gbit
x8
2048+64
bytes
128 K +
4 K bytes
64 pages
x 8192
blocks
1.7 to
1.95 V
45 ns
25 s
200 s
1.5 ms
LGA52(2)
NAND08GW3B2C
2.7 to
3.6 V
25 ns
TSOP48
LGA52(2)
NAND08GR4B2C
x16
1024+ 32
words
64 K +
2 K words
1.7 to
1.95 V
45 ns
NAND08GW4B2C
2.7 to
3.6 V
25 ns
NAND08GR3B4C
x8
2048+64
bytes
128 K +
4 K bytes
1.7 to
1.95 V
45 ns
LGA52(2)
NAND08GW3B4C
x8
2.7 to
3.6 V
25 ns
1.
x16 organization is only available for MCP products.
2.
The NAND08G-BxC is composed of two 4-Gbit dice.
相关PDF资料 |
PDF描述 |
|---|---|
| NAND128W3A2BV6E | 16M X 8 FLASH 3V PROM, 12000 ns, PDSO48 |
| NAND512R3A2CV6E | 64M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48 |
| NAND128W4A2CZA6E | 8M X 16 FLASH 3V PROM, 35 ns, PBGA55 |
| NAND128R4A2BZA6E | 8M X 16 FLASH 1.8V PROM, 35 ns, PBGA55 |
| NAND256R4A0DN6T | 16M X 16 FLASH 1.8V PROM, 15000 ns, PDSO48 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND08GW3B4BN6E | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3B4BN6F | 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel |
| NAND08GW3B4CN1F | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3B4CZL6E | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3C2AE01 | 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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