参数资料
型号: NAND08GW3B2CZL1F
厂商: NUMONYX
元件分类: PROM
英文描述: 1G X 8 FLASH 3V PROM, 25000 ns, PBGA52
封装: 12 X 17 MM, 1 MM PITCH, LEAD FREE, LGA-52
文件页数: 49/72页
文件大小: 1919K
代理商: NAND08GW3B2CZL1F
NAND04G-B2D, NAND08G-BxC
DC and AC parameters
Figure 24.
Equivalent testing circuit for AC characteristics measurement
Ai11085
NAND Flash
CL
2Rref
VDD
2Rref
GND
Table 28.
DC characteristics (1.8 V devices)
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
IDD1
Operating
current
Sequential
read
tRLRL minimum
E=VIL, IOUT = 0 mA
–10
20
mA
IDD2
Program
10
20
mA
IDD3
Erase
10
20
mA
IDD5
Standby current (CMOS(1))
E=VDD-0.2,
WP=0/VDD
10
50
A
ILI
Input leakage current(1)
VIN= 0 to VDDmax
±10
A
ILO
Output leakage current(1)
VOUT= 0 to VDDmax
±10
A
VIH
Input high voltage
0.8 * VDD
VDD + 0.3
V
VIL
Input low voltage
-0.3
0.2 * VDD
V
VOH
Output high voltage level
IOH = -100 A
VDD - 0.1
V
VOL
Output low voltage level
IOL = 100 A
0.1
V
IOL (RB)
Output low current (RB)
VOL = 0.1 V
3
4
mA
VLKO
VDD supply voltage (erase and
program lockout)
1.1
V
1.
Leakage current and standby current double in stacked devices.
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