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参数资料
| 型号： | NAND08GW3B2CZL1F |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 1G X 8 FLASH 3V PROM, 25000 ns, PBGA52 |
| 封装： | 12 X 17 MM, 1 MM PITCH, LEAD FREE, LGA-52 |
| 文件页数： | 9/72页 |
| 文件大小： | 1919K |
| 代理商： | NAND08GW3B2CZL1F |
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NAND04G-B2D, NAND08G-BxC
Signal descriptions
3.7
Write enable (W)
The Write Enable input, W, controls writing to the command interface, input address and
data latches. Both addresses and data are latched on the rising edge of Write Enable.
During power-up and power-down a recovery time of 10 s (min) is required before the
command interface is ready to accept a command. It is recommended to keep Write Enable
High during the recovery time.
3.8
Write protect (WP)
The Write Protect pin is an input that gives a hardware protection against unwanted program
or erase operations. When Write Protect is Low, VIL, the device does not accept any
program or erase operations.
It is recommended to keep the Write Protect pin Low, VIL, during power-up and power-down.
3.9
Ready/Busy (RB)
The Ready/Busy output, RB, is an open-drain output that identifies if the P/E/R controller is
currently active.
When Ready/Busy is Low, VOL, a read, program or erase operation is in progress. When the
operation completes, Ready/Busy goes High, VOH.
The use of an open-drain output allows the ready/busy pins from several memories to be
connected to a single pull-up resistor. A Low then indicates that one or more of the
memories is busy.
During power-up and power-down a minimum recovery time of 10 s is required before the
command interface is ready to accept a command. During this period the RB signal is Low,
VOL.
Refer to Section 12.1: Ready/busy signal electrical characteristics for details on how to
calculate the value of the pull-up resistor.
3.10
VDD supply voltage
VDD provides the power supply to the internal core of the memory device. It is the main
power supply for all operations (read, program and erase).
An internal voltage detector disables all functions whenever VDD is below VLKO (see
Table 29) to protect the device from any involuntary program/erase during power-transitions.
Each device in a system should have VDD decoupled with a 0.1 F capacitor. The PCB track
widths should be sufficient to carry the required program and erase currents.
3.11
VSS ground
Ground, VSS, is the reference for the power supply. It must be connected to the system
ground.
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| NAND08GW3B4BN6E | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
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| NAND08GW3C2AE01 | 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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