参数资料
型号: NAND08GW3B2CZL1F
厂商: NUMONYX
元件分类: PROM
英文描述: 1G X 8 FLASH 3V PROM, 25000 ns, PBGA52
封装: 12 X 17 MM, 1 MM PITCH, LEAD FREE, LGA-52
文件页数: 54/72页
文件大小: 1919K
代理商: NAND08GW3B2CZL1F
DC and AC parameters
NAND04G-B2D, NAND08G-BxC
Figure 29.
Sequential data output after read AC waveforms (EDO mode)
1.
In EDO mode, CL and AL are Low, VIL, and W is High, VIH.
2.
tRLQX is applicable for frequencies high than 33 MHz (for instance, tRLRL lower than 30 ns).
Figure 30.
Read status register or read EDC status register AC waveform
E
ai13175
R
I/O
RB
tRLRL
tRLQV
tRHRL
tRLQV
Data Out
tBHRL
tRHQZ
tEHQZ
(R Accesstime)
tEHQX
tRHQX(2)
tRLRH
tELQV
tRLQX
tELWH
tDVWH
Status Register
Output
70h or 7Bh
CL
E
W
R
I/O
tCLHWH
tWHDX
tWLWH
tWHCLL
tCLLRL
tDZRL
tRLQV
tEHQX
tRHQX
tWHRL
tELQV
tWHEH
ai13177
(Data Setup time)
(Data Hold time)
tEHQZ
tRHQZ
相关PDF资料
PDF描述
NAND128W3A2BV6E 16M X 8 FLASH 3V PROM, 12000 ns, PDSO48
NAND512R3A2CV6E 64M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND128W4A2CZA6E 8M X 16 FLASH 3V PROM, 35 ns, PBGA55
NAND128R4A2BZA6E 8M X 16 FLASH 1.8V PROM, 35 ns, PBGA55
NAND256R4A0DN6T 16M X 16 FLASH 1.8V PROM, 15000 ns, PDSO48
相关代理商/技术参数
参数描述
NAND08GW3B4BN6E 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND08GW3B4BN6F 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel
NAND08GW3B4CN1F 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND08GW3B4CZL6E 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND08GW3C2AE01 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel