参数资料
型号: NAND08GW3B2CZL1F
厂商: NUMONYX
元件分类: PROM
英文描述: 1G X 8 FLASH 3V PROM, 25000 ns, PBGA52
封装: 12 X 17 MM, 1 MM PITCH, LEAD FREE, LGA-52
文件页数: 35/72页
文件大小: 1919K
代理商: NAND08GW3B2CZL1F
Device operations
NAND04G-B2D, NAND08G-BxC
Table 18.
Electronic signature byte 4
I/O
Definition
Value
Description
I/O1-I/O0
Page size
(without spare area)
0 0
0 1
1 0
1 1
1 Kbyte
2 Kbytes
4 Kbytes
8 Kbytes
I/O2
Spare area size
(byte/512 byte)
0
1
8
16
I/O7, I/O3
Minimum sequential access
time
0 0
1 0
0 1
1 1
30/50 ns
25 ns
Reserved
I/O5-I/O4
Block size
(without spare area)
0 0
0 1
1 0
1 1
64 Kbytes
128 Kbytes
256 Kbytes
512 Kbytes
I/O6
Organization
0
1
x8
x16
Table 19.
Electronic signature byte 5
I/O
Definition
Value
Description
I/O1 - I/O0
Reserved
0 0
I/O3 - I/O2
Plane number
0 0
0 1
1 0
1 1
1 plane
2 planes
4 planes
8 planes
I/O6 - I/O4
Plane size
(without spare area)
0 0 0
0 0 1
0 1 0
0 1 1
1 0 0
1 0 1
1 1 0
1 1 1
64 Mbits
128 Mbits
256 Mbits
512 Mbits
1 Gbit
2 Gbits
4 Gbits
8 Gbits
I/O7
Reserved
0
相关PDF资料
PDF描述
NAND128W3A2BV6E 16M X 8 FLASH 3V PROM, 12000 ns, PDSO48
NAND512R3A2CV6E 64M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND128W4A2CZA6E 8M X 16 FLASH 3V PROM, 35 ns, PBGA55
NAND128R4A2BZA6E 8M X 16 FLASH 1.8V PROM, 35 ns, PBGA55
NAND256R4A0DN6T 16M X 16 FLASH 1.8V PROM, 15000 ns, PDSO48
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参数描述
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