参数资料
型号: NAND08GW3B2CZL1F
厂商: NUMONYX
元件分类: PROM
英文描述: 1G X 8 FLASH 3V PROM, 25000 ns, PBGA52
封装: 12 X 17 MM, 1 MM PITCH, LEAD FREE, LGA-52
文件页数: 13/72页
文件大小: 1919K
代理商: NAND08GW3B2CZL1F
Bus operations
NAND04G-B2D, NAND08G-BxC
Table 7.
Address insertion (x16 devices)
Bus
cycle(1)
1.
Any additional address input cycles are ignored.
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
1st
A7
A6
A5
A4
A3
A2
A1
A0
2nd
VIL
A10
A9
A8
3rd
A18
A17
A16
A15
A14
A13
A12
A11
4th
A26
A25
A24
A23
A22
A21
A20
A19
5th
VIL
A29(2)
2.
A29 is only valid for the NAND08G-BxC devices.
A28
A27
Table 8.
Address definition (x8 devices)
Address
Definition
A0 - A11
Column address
A12 - A17
Page address
A18 - A29
Block address(NAND04G-B2D)
A18 - A30
Block address (NAND08G-BxC)
A18 = 0
First plane
A18 = 1
Second plane
Table 9.
Address definition (x16 devices)
Address
Definition
A0 - A10
Column address
A11 - A16
Page address
A17 - A28
Block address (NAND04G-B2D)
A17 - A29
Block address (NAND08G-BxC)
A18 = 0
First plane
A18 = 1
Second plane
相关PDF资料
PDF描述
NAND128W3A2BV6E 16M X 8 FLASH 3V PROM, 12000 ns, PDSO48
NAND512R3A2CV6E 64M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND128W4A2CZA6E 8M X 16 FLASH 3V PROM, 35 ns, PBGA55
NAND128R4A2BZA6E 8M X 16 FLASH 1.8V PROM, 35 ns, PBGA55
NAND256R4A0DN6T 16M X 16 FLASH 1.8V PROM, 15000 ns, PDSO48
相关代理商/技术参数
参数描述
NAND08GW3B4BN6E 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND08GW3B4BN6F 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel
NAND08GW3B4CN1F 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND08GW3B4CZL6E 制造商:Micron Technology Inc 功能描述:NAND - Trays
NAND08GW3C2AE01 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel