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参数资料
| 型号： | NAND08GW3B2CZL1F |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 1G X 8 FLASH 3V PROM, 25000 ns, PBGA52 |
| 封装： | 12 X 17 MM, 1 MM PITCH, LEAD FREE, LGA-52 |
| 文件页数： | 6/72页 |
| 文件大小： | 1919K |
| 代理商： | NAND08GW3B2CZL1F |
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Memory array organization
NAND04G-B2D, NAND08G-BxC
2
Memory array organization
The memory array of the devices is made up of NAND structures where 32 cells are
connected in series. It is organized into blocks where each block contains 64 pages. The
array is split into two areas, the main area, and the spare area. The main area of the array is
used to store data, and the spare area typically stores error correction codes, software flags,
or bad block identification.
In x8 devices, the pages are split into a 2048-byte main area and a spare area of 64 bytes.
In x16 devices, the pages are split into a 1024-word main area and a spare area of
32 words. Refer to Figure 6: Memory array organization.
Bad blocks
In x8 devices, the NAND flash 2112-byte/1056-word page devices may contain bad blocks,
which are blocks that contain one or more invalid bits whose reliability is not guaranteed.
Additional bad blocks may develop during the lifetime of the device.
The bad block information is written prior to shipping (refer to Section 9.1: Bad block
management for more details).
Table 4 shows the minimum number of valid blocks. The values shown include both the bad
blocks that are present when the device is shipped and the bad blocks that could develop
later on.
These blocks need to be managed using bad blocks management, block replacement, or
error correction codes (refer to Section 9: Software algorithms).
Table 4.
Valid blocks
Density of device
Min
Max
4 Gbits
4016
4096
8Gbits(1)
1.
The NAND08G-BxC devices are composed of two 4-Gbit dice. The minimum number of valid blocks is
4016 for each die.
8032
8192
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND08GW3B4BN6E | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3B4BN6F | 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel |
| NAND08GW3B4CN1F | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3B4CZL6E | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3C2AE01 | 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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