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参数资料
| 型号： | NAND08GW3B2CZL1F |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 1G X 8 FLASH 3V PROM, 25000 ns, PBGA52 |
| 封装： | 12 X 17 MM, 1 MM PITCH, LEAD FREE, LGA-52 |
| 文件页数： | 43/72页 |
| 文件大小： | 1919K |
| 代理商： | NAND08GW3B2CZL1F |
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Software algorithms
NAND04G-B2D, NAND08G-BxC
9.3
Garbage collection
When a data page needs to be modified, it is faster to write to the first available page,
resulting in the previous page being marked as invalid. After several updates it is necessary
to remove invalid pages to free memory space.
To free this memory space and allow further program operations, the implementation of a
garbage collection algorithm is recommended. In garbage collection software, the valid
pages are copied into a free area and the block containing the invalid pages is erased as
show in Figure 22.
Figure 22.
Garbage collection
9.4
Wear-leveling algorithm
For write-intensive applications, the implementation of a wear-leveling algorithm is
recommended to monitor and spread the number of write cycles per block.
In memories that do not use a wear-leveling algorithm, not all blocks get used at the same
rate. The wear-leveling algorithm ensures that equal use is made of all the available write
cycles for each block. There are two wear-leveling levels:
●
First level wear-leveling, where new data is programmed to the free blocks that have
had the fewest write cycles
●
Second level wear-leveling, where long-lived data is copied to another block so that the
original block can be used for more frequently-changed data.
The second level wear-leveling is triggered when the difference between the maximum and
the minimum number of write cycles per block reaches a specific threshold.
Valid
page
Invalid
page
Free
page
(erased)
Old area
AI07599B
New area (After GC)
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| NAND128W4A2CZA6E | 8M X 16 FLASH 3V PROM, 35 ns, PBGA55 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND08GW3B4BN6E | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3B4BN6F | 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel |
| NAND08GW3B4CN1F | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3B4CZL6E | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3C2AE01 | 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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