- 您现在的位置：买卖IC网 > PDF目录69541 > W9725G6IB-18 (WINBOND ELECTRONICS CORP) 16M X 16 DDR DRAM, 0.35 ns, PBGA84 PDF资料下载
参数资料
| 型号： | W9725G6IB-18 |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 16M X 16 DDR DRAM, 0.35 ns, PBGA84 |
| 封装： | 8 X 12.50 MM, ROHS COMPLIANT, WBGA-84 |
| 文件页数： | 12/69页 |
| 文件大小： | 1644K |
| 代理商： | W9725G6IB-18 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页当前第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页
PRELIMINARY W9725G6IB
Publication Release Date:Nov. 14, 2008
- 2 -
Revision P04
7.4.1.1.
Examples of posted CAS operation......................................................................23
7.4.2.
Burst mode operation.......................................................................................................24
7.4.3.
Burst read mode operation...............................................................................................25
7.4.4.
Burst write mode operation ..............................................................................................25
7.4.5.
Write data mask ...............................................................................................................26
7.5.
Burst Interrupt .....................................................................................................................................26
7.6.
Precharge operation............................................................................................................................27
7.6.1.
Burst read operation followed by precharge.....................................................................27
7.6.2.
Burst write operation followed by precharge ....................................................................27
7.7.
Auto-precharge operation ...................................................................................................................27
7.7.1.
Burst read with Auto-precharge .......................................................................................28
7.7.2.
Burst write with Auto-precharge .......................................................................................28
7.8.
Refresh Operation...............................................................................................................................29
7.9.
Power Down Mode..............................................................................................................................29
7.9.1.
Power Down Entry ...........................................................................................................30
7.9.2.
Power Down Exit..............................................................................................................30
7.10.
Input clock frequency change during precharge power down....................................................30
8.
OPERATION MODE ...........................................................................................................................31
8.1.
Command Truth Table ........................................................................................................................31
8.2.
Clock Enable (CKE) Truth Table for Synchronous Transitions ...........................................................32
8.3.
Data Mask (DM) Truth Table...............................................................................................................32
8.4.
Function Truth Table ...........................................................................................................................33
8.5.
Simplified Stated Diagram...................................................................................................................36
9.
ELECTRICAL CHARACTERISTICS ...................................................................................................37
9.1.
Absolute Maximum Ratings ................................................................................................................37
9.2.
Operating Temperature Condition.......................................................................................................37
9.3.
Recommended DC Operating Conditions ...........................................................................................37
9.4.
ODT DC Electrical Characteristics ......................................................................................................38
9.5.
Input DC Logic Level...........................................................................................................................38
9.6.
Input AC Logic Level ...........................................................................................................................38
9.7.
Capacitance ........................................................................................................................................39
9.8.
Leakage and Output Buffer Characteristics ........................................................................................39
9.9.
DC Characteristics ..............................................................................................................................40
9.9.1.
DC Characteristics for -18/-25/-3 speed grades...............................................................40
9.10.
IDD Measurement Test Parameters ..........................................................................................42
9.11.
AC Characteristics.....................................................................................................................43
9.11.1.
AC Characteristics and Operating Condition for -18 speed grade ...................................43
9.11.2.
AC Characteristics and Operating Condition for -25/-3 speed grade ...............................45
9.12.
AC Input Test Conditions...........................................................................................................47
9.13.
Differential Input AC Logic Level ...............................................................................................48
9.14.
Differential AC Output Parameter ..............................................................................................48
9.15.
AC Overshoot / Undershoot Specification .................................................................................49
相关PDF资料 |
PDF描述 |
|---|---|
| W9864G6EB-7 | 4M X 16 SYNCHRONOUS DRAM, 5.5 ns, PBGA60 |
| WE128K8200CQ | 128K X 8 EEPROM 5V MODULE, 200 ns, CDIP32 |
| WED9LC6816V1512BI | SPECIALTY MEMORY CIRCUIT, PBGA153 |
| WS128K32-35G2TMEA | 128K X 32 MULTI DEVICE SRAM MODULE, 35 ns, CQFP68 |
| WS128K32-55G2TIE | 128K X 32 MULTI DEVICE SRAM MODULE, 55 ns, CQFP68 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W9725G6IB-25 | 功能描述:IC DDR2-800 SDRAM 256MB 84-WBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.173"，4.40mm 宽） 供应商设备封装:8-MFP 包装:带卷 (TR) |
| W9725G6JB | 制造商:WINBOND 制造商全称:Winbond 功能描述:4M ? 4 BANKS ? 16 BIT DDR2 SDRAM |
| W9725G6JB-25 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR2 SDRAM 256M-Bit 16Mx16 1.8V 84-Pin WBGA 制造商:Winbond Electronics 功能描述:512MB DDRII |
| W9725G6JB25I | 功能描述:IC DDR2 SDRAM 256MBIT 84WBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN（2x3） 包装:管件 产品目录页面:1445 (CN2011-ZH PDF) |
| W9725G6KB-18 | 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
发布紧急采购，3分钟左右您将得到回复。