参数资料
型号: W9725G6IB-18
厂商: WINBOND ELECTRONICS CORP
元件分类: DRAM
英文描述: 16M X 16 DDR DRAM, 0.35 ns, PBGA84
封装: 8 X 12.50 MM, ROHS COMPLIANT, WBGA-84
文件页数: 39/69页
文件大小: 1644K
代理商: W9725G6IB-18
PRELIMINARY W9725G6IB
Publication Release Date:Nov. 14, 2008
- 44 -
Revision P04
AC Characteristics and Operating Condition for -18 speed grade, continued
SPEED GRADE
DDR2-1066 (-18)
UNIT
Bin(CL-tRCD-tRP)
7-7-7
tCK
SYM.
PARAMETER
MIN.
MAX.
NOTES
tWPRE
Write preamble
0.35
tCK
tWPST
Write postamble
0.4
0.6
tCK
9
tDQSCK
DQS output access time from CLK / CLK
-325
325
pS
tDQSQ
DQS-DQ skew for DQS & associated DQ signals
175
pS
10
tRPRE
Read preamble
0.9
1.1
tCK
11
tRPST
Read postamble
0.4
0.6
tCK
11
tDS(base)
DQ and DM input setup time
0
pS
tDH(base)
DQ and DM input hold time
75
pS
tDIPW
DQ and DM input pulse width for each input
0.35
tCK
tHZ
Data-out high-impedance time from CLK/ CLK
tAC,max
pS
11
tLZ(DQS)
DQS/ DQS -low-impedance time from CLK/ CLK
tAC,min
tAC,max
pS
11
tLZ(DQ)
DQ low-impedance time from CLK/ CLK
2 x tAC,min
tAC,max
pS
11
tQHS
Data hold skew factor
250
pS
tQH
DQ/DQS output hold time from DQS
tHP - tQHS
pS
tXSNR
Exit Self Refresh to a non-Read command
tRFC + 10
nS
tXSRD
Exit Self Refresh to a Read command
200
tCK
tXP
Exit precharge power down to any command
3
tCK
tXARD
Exit active power down to Read command
3
tCK
12
tXARDS
Exit active power down to Read command
(slow exit, lower power)
10 - AL
tCK
12,13
tAOND
ODT turn-on delay
2
tCK
14
tAON
ODT turn-on
tAC,min
tAC,max + 2.575
nS
tAONPD
ODT turn-on (Power Down mode)
tAC,min + 2
3 x tCK+
tAC,max+1
nS
tAOFD
ODT turn-off delay
2.5
tCK
tAOF
ODT turn-off
tAC,min
tAC,max + 0.6
nS
15
tAOFPD
ODT turn-off (Power Down mode)
tAC,min + 2
2.5 x tCK +
tAC,max + 1
nS
tANPD
ODT to power down Entry Latency
4
tCK
tAXPD
ODT Power Down Exit Latency
11
tCK
tMRD
Mode Register Set command cycle time
2
tCK
tMOD
MRS command to ODT update delay
0
12
nS
tOIT
OCD Drive mode output delay
0
12
nS
tDELAY
Minimum time clocks remain ON after CKE
asynchronously drops LOW
tIS+tCK+tIH
nS
16
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