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| 型号： | W9725G6IB-18 |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 16M X 16 DDR DRAM, 0.35 ns, PBGA84 |
| 封装： | 8 X 12.50 MM, ROHS COMPLIANT, WBGA-84 |
| 文件页数： | 15/69页 |
| 文件大小： | 1644K |
| 代理商： | W9725G6IB-18 |
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PRELIMINARY W9725G6IB
Publication Release Date:Nov. 14, 2008
- 22 -
Revision P04
Upon exit from Self Refresh, the DDR2 SDRAM can be put back into Self Refresh mode after waiting
at least tXSNR period and issuing one refresh command (refresh period of tRFC). NOP or Deselect
commands must be registered on each positive clock edge during the Self Refresh exit interval tXSNR.
ODT should be turned off during tXSRD.
The use of Self Refresh mode introduces the possibility that an internally timed refresh event can be
missed when CKE is raised for exit from Self Refresh mode. Upon exit from Self Refresh, the DDR2
SDRAM requires a minimum of one extra auto refresh command before it is put back into Self Refresh
mode.
7.3.9.
Refresh Command
(
CS = "L", RAS = "L", CAS = "L", WE = "H", CKE = "H", BA0, BA1, A0 to A12 = Don’t Care)
Refresh is used during normal operation of the DDR2 SDRAM. This command is non persistent, so it
must be issued each time a refresh is required.
The refresh addressing is generated by the internal refresh controller. This makes the address
bits ”Don’t Care” during an Auto Refresh command. The DDR2 SDRAM requires Auto Refresh cycles
at an average periodic interval of tREFI (max.).
When the refresh cycle has completed, all banks of the DDR2 SDRAM will be in the precharged (idle)
state. A delay between the auto refresh command (REF) and the next activate command or
subsequent auto refresh command must be greater than or equal to the auto refresh cycle time (tRFC).
To allow for improved efficiency in scheduling and switching between tasks, some flexibility in the
absolute refresh interval is provided. A maximum of eight Refresh commands can be posted to any
given DDR2 SDRAM, meaning that the maximum absolute interval between any Refresh command
and the next Refresh command is 9 x tREFI.
T0
T1
T2
T3
CLK/CLK
CKE
CMD
≧
≧tRP
≧
≧tRFC
≧
≧tRFC
NOP
ANY
REF
Precharge
"HIGH"
Tm
Tn
Tn + 1
Figure 13
—
—Refresh command
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W9725G6IB-25 | 功能描述:IC DDR2-800 SDRAM 256MB 84-WBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.173"，4.40mm 宽） 供应商设备封装:8-MFP 包装:带卷 (TR) |
| W9725G6JB | 制造商:WINBOND 制造商全称:Winbond 功能描述:4M ? 4 BANKS ? 16 BIT DDR2 SDRAM |
| W9725G6JB-25 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR2 SDRAM 256M-Bit 16Mx16 1.8V 84-Pin WBGA 制造商:Winbond Electronics 功能描述:512MB DDRII |
| W9725G6JB25I | 功能描述:IC DDR2 SDRAM 256MBIT 84WBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN（2x3） 包装:管件 产品目录页面:1445 (CN2011-ZH PDF) |
| W9725G6KB-18 | 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
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