- 您现在的位置：买卖IC网 > PDF目录69541 > W9725G6IB-18 (WINBOND ELECTRONICS CORP) 16M X 16 DDR DRAM, 0.35 ns, PBGA84 PDF资料下载
参数资料
| 型号： | W9725G6IB-18 |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 16M X 16 DDR DRAM, 0.35 ns, PBGA84 |
| 封装： | 8 X 12.50 MM, ROHS COMPLIANT, WBGA-84 |
| 文件页数： | 34/69页 |
| 文件大小： | 1644K |
| 代理商： | W9725G6IB-18 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页当前第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页
PRELIMINARY W9725G6IB
Publication Release Date:Nov. 14, 2008
- 4 -
Revision P04
1. GENERAL DESCRIPTION
The W9725G6IB is a 256M bits DDR2 SDRAM, organized as 4,194,304 words × 4 banks × 16 bits.
This device achieves high speed transfer rates up to 1066Mb/sec/pin (DDR2-1066) for general
applications. W9725G6IB is sorted into the following speed grades: -18, -25 and -3. The -18 is
compliant to the DDR2-1066/CL7 specification, the -25 is compliant to the DDR2-800/CL6
specification, the -3 is compliant to the DDR2-667/CL5 specification.
All of the control and address inputs are synchronized with a pair of externally supplied differential
clocks. Inputs are latched at the cross point of differential clocks (CLK rising and
CLK falling). All
I/Os are synchronized with a single ended DQS or differential DQS-
DQS pair in a source
synchronous fashion.
2. FEATURES
Power Supply: VDD, VDDQ = 1.8 V ± 0.1 V
Double Data Rate architecture: two data transfers per clock cycle
CAS Latency: 3, 4, 5, 6 and 7
Burst Length: 4 and 8
Bi-directional, differential data strobes (DQS and
DQS ) are transmitted / received with data
Edge-aligned with Read data and center-aligned with Write data
DLL aligns DQ and DQS transitions with clock
Differential clock inputs (CLK and
CLK )
Data masks (DM) for write data.
Commands entered on each positive CLK edge, data and data mask are referenced to both edges
of DQS
Posted
CAS programmable additive latency supported to make command and data bus efficiency
Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
Off-Chip-Driver impedance adjustment (OCD) and On-Die-Termination (ODT) for better signal
quality
Auto-precharge operation for read and write bursts
Auto Refresh and Self Refresh modes
Precharged Power Down and Active Power Down
Write Data Mask
Write Latency = Read Latency - 1 (WL = RL - 1)
Interface: SSTL_18
Packaged in WBGA 84 Ball (8X12.5 mm
2), using Lead free materials with RoHS compliant
相关PDF资料 |
PDF描述 |
|---|---|
| W9864G6EB-7 | 4M X 16 SYNCHRONOUS DRAM, 5.5 ns, PBGA60 |
| WE128K8200CQ | 128K X 8 EEPROM 5V MODULE, 200 ns, CDIP32 |
| WED9LC6816V1512BI | SPECIALTY MEMORY CIRCUIT, PBGA153 |
| WS128K32-35G2TMEA | 128K X 32 MULTI DEVICE SRAM MODULE, 35 ns, CQFP68 |
| WS128K32-55G2TIE | 128K X 32 MULTI DEVICE SRAM MODULE, 55 ns, CQFP68 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W9725G6IB-25 | 功能描述:IC DDR2-800 SDRAM 256MB 84-WBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.173"，4.40mm 宽） 供应商设备封装:8-MFP 包装:带卷 (TR) |
| W9725G6JB | 制造商:WINBOND 制造商全称:Winbond 功能描述:4M ? 4 BANKS ? 16 BIT DDR2 SDRAM |
| W9725G6JB-25 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR2 SDRAM 256M-Bit 16Mx16 1.8V 84-Pin WBGA 制造商:Winbond Electronics 功能描述:512MB DDRII |
| W9725G6JB25I | 功能描述:IC DDR2 SDRAM 256MBIT 84WBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN（2x3） 包装:管件 产品目录页面:1445 (CN2011-ZH PDF) |
| W9725G6KB-18 | 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
发布紧急采购，3分钟左右您将得到回复。