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参数资料
| 型号： | W9725G8JB-25I |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | DDR DRAM, PBGA84 |
| 封装： | 8 X 12.50 MM, ROHS COMPLIANT, WBGA-84 |
| 文件页数： | 29/86页 |
| 文件大小： | 1462K |
| 代理商： | W9725G8JB-25I |
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W9725G8JB
Publication Release Date: Oct. 12, 2010
- 35 -
Revision A01
Function Truth Table, continued
CURRENT
STATE
CS
RAS
CAS
WE
ADDRESS
COMMAND
ACTION
NOTES
Write
Recovering
H
X
DSL
NOP-> Bank active after tWR
L
H
X
NOP
NOP-> Bank active after tWR
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
1
L
H
L
BA, CA, A10
WRIT/WRITA
New write
L
H
BA, RA
ACT
ILLEGAL
1
L
H
L
BA, A10
PRE/PREA
ILLEGAL
1
L
H
X
AREF/SELF
ILLEGAL
L
Op-Code
MRS/EMRS
ILLEGAL
Write
Recovering
with Auto-
precharge
H
X
DSL
NOP-> Precharge after tWR
L
H
X
NOP
NOP-> Precharge after tWR
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
1
L
H
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
1
L
H
BA, RA
ACT
ILLEGAL
1
L
H
L
BA, A10
PRE/PREA
ILLEGAL
1
L
H
X
AREF/SELF
ILLEGAL
L
Op-Code
MRS/EMRS
ILLEGAL
Refreshing
H
X
DSL
NOP-> Idle after tRC
L
H
X
NOP
NOP-> Idle after tRC
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
L
H
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
L
H
BA, RA
ACT
ILLEGAL
L
H
L
BA, A10
PRE/PREA
ILLEGAL
L
H
X
AREF/SELF
ILLEGAL
L
Op-Code
MRS/EMRS
ILLEGAL
Mode
Register
Accessing
H
X
DSL
NOP-> Idle after tMRD
L
H
X
NOP
NOP-> Idle after tMRD
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
L
H
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
L
H
BA, RA
ACT
ILLEGAL
L
H
L
BA, A10
PRE/PREA
ILLEGAL
L
H
X
AREF/SELF
ILLEGAL
L
Op-Code
MRS/EMRS
ILLEGAL
Notes:
1. This command may be issued for other banks, depending on the state of the banks.
2. All banks must be in "IDLE".
3. Read or Write burst interruption is prohibited for burst length of 4 and only allowed for burst length of 8. Burst read/write can
only be interrupted by another read/write with 4 bit burst boundary. Any other case of read/write interrupt is not allowed.
Remark: H = High level, L = Low level, X = High or Low level (
Dont Care), V = Valid data.
相关PDF资料 |
PDF描述 |
|---|---|
| W972GG8JB-25I | 256M X 8 DDR DRAM, 0.4 ns, PBGA60 |
| W972GG8JB-18 | 256M X 8 DDR DRAM, 0.35 ns, PBGA60 |
| W9751G6JB-18 | 32M X 16 DDR DRAM, 0.35 ns, PBGA84 |
| W981204AH-8H | 32M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54 |
| W981216BH75L | 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W9725G8JB25ITR | 制造商:Winbond Electronics Corp 功能描述:256M DDR2-800, X8, IND TEMP |
| W9725G8JB25TR | 制造商:Winbond Electronics Corp 功能描述:256M DDR2-800, X8 |
| W9725G8KB-18 | 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
| W9725G8KB-25 | 制造商:Winbond Electronics 功能描述:IC MEMORY 制造商:Winbond Electronics Corp 功能描述:IC MEMORY |
| W9725G8KB-25 TR | 制造商:Winbond Electronics Corp 功能描述:256M DDR2-800, X8 |
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