参数资料
型号: W9725G8JB-25I
厂商: WINBOND ELECTRONICS CORP
元件分类: DRAM
英文描述: DDR DRAM, PBGA84
封装: 8 X 12.50 MM, ROHS COMPLIANT, WBGA-84
文件页数: 38/86页
文件大小: 1462K
代理商: W9725G8JB-25I
W9725G8JB
Publication Release Date: Oct. 12, 2010
- 43 -
Revision A01
9.11
AC Characteristics
9.11.1 AC Characteristics and Operating Condition for -18 speed grade
SYM.
SPEED GRADE
DDR2-1066 (-18)
UNIT
25
NOTES
Bin(CL-tRCD-tRP)
7-7-7
PARAMETER
MIN.
MAX.
tRCD
Active to Read/Write Command Delay Time
13.125
nS
23
tRP
Precharge to Active Command Period
13.125
nS
23
tRC
Active to Ref/Active Command Period
53.125
nS
23
tRAS
Active to Precharge Command Period
40
70000
nS
4,23
tRFC
Auto Refresh to Active/Auto Refresh command period
75
nS
5
tREFI
Average periodic
refresh Interval
0°C
TCASE 85°C
7.8
μS
5
85°C
< TCASE
95°C
3.9
μS
5,6
tCCD
CAS to CAS command delay
2
nCK
tCK(avg)
Average clock period
tCK(avg) @ CL=4
3.75
7.5
nS
30,31
tCK(avg) @ CL=5
3
7.5
nS
30,31
tCK(avg) @ CL=6
2.5
7.5
nS
30,31
tCK(avg) @ CL=7
1.875
7.5
nS
30,31
tCH(avg)
Average clock high pulse width
0.48
0.52
tCK(avg)
30,31
tCL(avg)
Average clock low pulse width
0.48
0.52
tCK(avg)
30,31
tAC
DQ output access time from CLK/ CLK
-350
350
pS
35
tDQSCK
DQS output access time from CLK / CLK
-325
325
pS
35
tDQSQ
DQS-DQ skew for DQS & associated DQ signals
175
pS
13
tCKE
CKE minimum high and low pulse width
3
nCK
7
tRRD
Active to active command period for 1KB page size
7.5
nS
8,23
tFAW
Four Activate Window for 1KB page size
35
nS
23
tWR
Write recovery time
15
nS
23
tDAL
Auto-precharge write recovery + precharge time
WR + tnRP
nCK
24
tWTR
Internal Write to Read command delay
7.5
nS
9,23
tRTP
Internal Read to Precharge command delay
7.5
nS
4,23
tIS (base)
Address and control input setup time
125
pS
10, 26,
40,42,43
tIH (base)
Address and control input hold time
200
pS
11, 26,
40,42,43
tIS (ref)
Address and control input setup time
325
pS
10,26,
40,42,43
tIH (ref)
Address and control input hold time
325
pS
11,26,
40,42,43
tIPW
Address and control input pulse width for each input
0.6
tCK(avg)
tDQSS
DQS latching rising transitions to associated clock edges
-0.25
0.25
tCK(avg)
28
tDSS
DQS falling edge to CLK setup time
0.2
tCK(avg)
28
tDSH
DQS falling edge hold time from CLK
0.2
tCK(avg)
28
tDQSH
DQS input high pulse width
0.35
tCK(avg)
tDQSL
DQS input low pulse width
0.35
tCK(avg)
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