参数资料
型号: W9725G8JB-25I
厂商: WINBOND ELECTRONICS CORP
元件分类: DRAM
英文描述: DDR DRAM, PBGA84
封装: 8 X 12.50 MM, ROHS COMPLIANT, WBGA-84
文件页数: 45/86页
文件大小: 1462K
代理商: W9725G8JB-25I
W9725G8JB
Publication Release Date: Oct. 12, 2010
- 5 -
Revision A01
3.
KEY PARAMETERS
SYM.
SPEED GRADE
DDR2-1066
DDR2-800
DDR2-667
Bin(CL-tRCD-tRP)
7-7-7
5-5-5/6-6-6
5-5-5
Part Number Extension
-18
-25/25I
-3
tCK(avg)
Average clock period
@CL = 7
Min.
1.875 nS
Max.
7.5 nS
@CL = 6
Min.
2.5 nS
Max.
7.5 nS
8 nS
@CL = 5
Min.
3 nS
2.5 nS
3 nS
Max.
7.5 nS
8 nS
@CL = 4
Min.
3.75 nS
Max.
7.5 nS
8 nS
@CL = 3
Min.
5 nS
Max.
8 nS
tRCD
Active to Read/Write Command Delay Time
Min.
13.125 nS
12.5 nS
15 nS
tRP
Precharge to Active Command Period
Min.
13.125 nS
12.5 nS
15 nS
tRC
Active to Ref/Active Command Period
Min.
53.125 nS
52.5 nS
55 nS
tRAS
Active to Precharge Command Period
Min.
40 nS
IDD0
Operating current
Max.
70 mA
65 mA
60 mA
IDD1
Operation current (Single bank)
Max.
80 mA
70 mA
65 mA
IDD4R
Operating burst read current
Max.
115 mA
100 mA
90 mA
IDD4W
Operating burst write current
Max.
130 mA
110 mA
95 mA
IDD5B
Burst refresh current
Max.
85 mA
80 mA
IDD6
Self refresh current (TCASE
85°C)
Max.
6 mA
IDD7
Operating bank interleave read current
Max.
170 mA
150 mA
140mA
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