参数资料
型号: MT42L64M32D1KL-25 IT:A
厂商: Micron Technology Inc
文件页数: 123/164页
文件大小: 0K
描述: IC DDR2 SDRAM 2GBIT 168FBGA
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: 移动 LPDDR2 SDRAM
存储容量: 2G(64M x 32)
速度: 400MHz
接口: 并联
电源电压: 1.14 V ~ 1.3 V
工作温度: -25°C ~ 85°C
封装/外壳: 168-WFBGA
供应商设备封装: 168-FBGA(12x12)
包装: 散装
2Gb: x16, x32 Mobile LPDDR2 SDRAM S4
AC and DC Logic Input Measurement Levels for Differential
Signals
AC and DC Logic Input Measurement Levels for Differential Signals
Figure 85: Differential AC Swing Time and t DVAC
t DVAC
V IH,diff(AC)min
V IH,diff(DC)min
CK, CK#
0.0
V IH,diff(DC)max
1/2 cycle
DQS, DQS#
t DVAC
V IH,diff(AC)max
Time
Table 66: Differential AC and DC Input Levels
For CK and CK#, V REF = V REFCA(DC) ; For DQS and DQS# V REF = V REFDQ(DC)
LPDDR2-1066 to LPDDR2-466
LPDDR2-400 to LPDDR2-200
Symbol
Parameter
Min
Max
Min
Max
Unit Notes
V IH,diff(AC)
Differential input
2 × (V IH(AC) - V REF )
Note 1
2 × (V IH(AC) - V REF )
Note 1
V
2
HIGH AC
V IL,diff(AC)
Differential input
Note 1
2 × (V REF - V IL(AC) )
Note 1
2 × (V REF - V IL(AC) )
V
2
LOW AC
V IH,diff(DC)
Differential input
2 × (V IH(DC) - V REF )
Note 1
2 × (V IH(DC) - V REF )
Note 1
V
3
HIGH
V IL,diff(DC)
Differential input
Note 1
2 × (V REF - V IL(DC) )
Note 1
2 × (V REF - V IL(DC) )
V
3
LOW
Notes:
1. These values are not defined, however the single-ended signals CK, CK#, DQS, and DQS#
must be within the respective limits (V IH(DC)max , V IL(DC)min ) for single-ended signals and
must comply with the specified limitations for overshoot and undershoot (see Figure 91
(page 130)).
PDF: 09005aef83f3f2eb
2gb_mobile_lpddr2_s4_g69a.pdf – Rev. N 3/12 EN
123
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2010 Micron Technology, Inc. All rights reserved.
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