参数资料
型号: MT42L64M32D1KL-25 IT:A
厂商: Micron Technology Inc
文件页数: 89/164页
文件大小: 0K
描述: IC DDR2 SDRAM 2GBIT 168FBGA
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: 移动 LPDDR2 SDRAM
存储容量: 2G(64M x 32)
速度: 400MHz
接口: 并联
电源电压: 1.14 V ~ 1.3 V
工作温度: -25°C ~ 85°C
封装/外壳: 168-WFBGA
供应商设备封装: 168-FBGA(12x12)
包装: 散装
2Gb: x16, x32 Mobile LPDDR2 SDRAM S4
MODE REGISTER READ
Figure 64: Temperature Sensor Timing
Device
Temp
Margin
Temp
< (tTSI + ReadInterval + SysRespDelay)
2C
Temp
Grad
ient
MR4
Trip Level
tTSI
MR4 = 0x03
MR4 = 0x86
MR4 = 0x86
MR4 = 0x86
MR4 = 0x86
Time
Temperture sensor update
ReadInterval
SysRespDelay
Host MR4 READ
MRR MR4 = 0x03
MRR MR4 = 0x86
DQ Calibration
Mobile LPDDR2 devices feature a DQ calibration function that outputs one of two pre-
defined system timing calibration patterns. For x16 devices, pattern A (MRR to MRR32),
and pattern B (MRR to MRR40), will return the specified pattern on DQ0 and DQ8; x32
devices return the specified pattern on DQ0, DQ8, DQ16, and DQ24.
For x16 devices, DQ[7:1] and DQ[15:9] drive the same information as DQ0 during the
MRR burst. For x32 devices, DQ[7:1], DQ[15:9], DQ[23:17], and DQ[31:25] drive the
same information as DQ0 during the MRR burst. MRR DQ calibration commands can
occur only in the idle state.
PDF: 09005aef83f3f2eb
2gb_mobile_lpddr2_s4_g69a.pdf – Rev. N 3/12 EN
89
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2010 Micron Technology, Inc. All rights reserved.
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