参数资料
型号: MT42L64M32D1KL-25 IT:A
厂商: Micron Technology Inc
文件页数: 52/164页
文件大小: 0K
描述: IC DDR2 SDRAM 2GBIT 168FBGA
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: 移动 LPDDR2 SDRAM
存储容量: 2G(64M x 32)
速度: 400MHz
接口: 并联
电源电压: 1.14 V ~ 1.3 V
工作温度: -25°C ~ 85°C
封装/外壳: 168-WFBGA
供应商设备封装: 168-FBGA(12x12)
包装: 散装
2Gb: x16, x32 Mobile LPDDR2 SDRAM S4
Mode Register Definition
Table 37: MR17 PASR Segment Mask (MA[7:0] = 011h)
OP7
OP6
OP5
OP4
OP3
OP2
OP1
OP0
Segment mask
Note:
1. This table applies for 1Gb to 8Gb devices only.
Table 38: MR17 PASR Segment Mask Definitions
Feature
Segment[7:0] mask
Type
Write-only
OP
OP[7:0]
Definition
0b: refresh enable to the segment: = unmasked (default)
1b: refresh blocked: = masked
Table 39: MR17 PASR Row Address Ranges in Masked Segments
1Gb
2Gb, 4Gb
8Gb
Segment
0
1
2
3
4
5
6
7
OP
0
1
2
3
4
5
6
7
Segment Mask
XXXXXXX1
XXXXXX1X
XXXXX1XX
XXXX1XXX
XXX1XXXX
XX1XXXXX
X1XXXXXX
1XXXXXXX
R[12:10]
R[13:11]
000b
001b
010b
011b
100b
101b
110b
111b
R[14:12]
Note:
1. X is “Don’t Care” for the designated segment.
Table 40: Reserved Mode Registers
Mode Reg-
ister
MA
Address
Restriction
OP7
OP6
OP5
OP4
OP3
OP2
OP1
OP0
MR[18:19]
MR[20:31]
MR[33:39]
MA[7:0]
12h–13h
14h–1Fh
21h–27h
RFU
NVM 1
DNU 1
Reserved
MR[41:47]
29h–2Fh
MR[48:62]
MR[64:126]
MR127
MR[128:190]
MR191
MR[192:254]
MR255
30h–3Eh
40h–7Eh
7Fh
80h–BEh
BFh
C0h–FEh
FFh
RFU
RFU
DNU
RVU 1
DNU
RVU
DNU
Note:
1. NVM = nonvolatile memory use only; DNU = Do not use; RVU = Reserved for vendor use.
PDF: 09005aef83f3f2eb
2gb_mobile_lpddr2_s4_g69a.pdf – Rev. N 3/12 EN
52
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2010 Micron Technology, Inc. All rights reserved.
相关PDF资料
PDF描述
IDT71V67803S133BQG8 IC SRAM 9MBIT 133MHZ 165FBGA
IDT71V65803S150PFG IC SRAM 9MBIT 150MHZ 100TQFP
IDT71V67903S85BQI8 IC SRAM 9MBIT 85NS 165FBGA
IDT71V67903S80BQI8 IC SRAM 9MBIT 80NS 165FBGA
IDT71V67903S75BQI8 IC SRAM 9MBIT 75NS 165FBGA
相关代理商/技术参数
参数描述