参数资料
型号: MT46V32M16BN-5BLIT
元件分类: DRAM
英文描述: 32M X 16 DDR DRAM, 0.7 ns, PBGA60
封装: 10 X 12.50 MM, LEAD FREE, PLASTIC, FBGA-60
文件页数: 32/82页
文件大小: 2855K
代理商: MT46V32M16BN-5BLIT
512Mb: x4, x8, x16
DDR SDRAM
09005aef80a1d9e7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512MBDDRx4x8x16_2.fm - Rev. H 7/04 EN
38
2000 Micron Technology, Inc. All rights reserved.
Figure 29: WRITE to Precharge – Interrupting
NOTE:
1. DI b = data-in for column b.
2. Subsequent element of data-in is applied in the programmed order following DI b.
3. An interrupted burst of 8 is shown; two data elements are written.
4. tWR is referenced from the first positive CK edge after the last data-in pair.
5. A10 is LOW with the WRITE command (auto precharge is disabled).
6. DQS is required at T4 and T4n (nominal case) to register DM.
7. If the burst of 4 was used, DQS and DM would not be required at T3, T3n, T4 and T4n.
8. PRE = PRECHARGE command.
tDQSS
tDQSS (NOM)
CK
CK#
COMMAND
WRITE
NOP
PRE8
NOP
ADDRESS
Bank a,
Col b
Bank,
(a or all)
NOP
T0
T1
T2
T3
T2n
T4
T5
T1n
T6
tWR
tRP
DQ
DQS
DM
DI
b
tDQSS
tDQSS (MIN)
DQ
DQS
DM
DI
b
tDQSS
tDQSS (MAX)
DQ
DQS
DM
DI
b
DON’T CARE
TRANSITIONING DATA
T3n
T4n
相关PDF资料
PDF描述
MT46V32M81AZ4-6T:G 32M X 4 DDR DRAM, 0.75 ns, PDSO66
MT47H128M8HV-187ELIT:E 128M X 8 DDR DRAM, 0.35 ns, PBGA60
MT47H128M8HQ-187ELAT:E 128M X 8 DDR DRAM, 0.35 ns, PBGA60
MT48LC2M32B1TG-7 2M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
MT48LC32M4A2P-7ELIT:G 32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
相关代理商/技术参数
参数描述