参数资料
型号: MT46V32M16BN-5BLIT
元件分类: DRAM
英文描述: 32M X 16 DDR DRAM, 0.7 ns, PBGA60
封装: 10 X 12.50 MM, LEAD FREE, PLASTIC, FBGA-60
文件页数: 45/82页
文件大小: 2855K
代理商: MT46V32M16BN-5BLIT
512Mb: x4, x8, x16
DDR SDRAM
09005aef80a1d9e7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512MbDDRx4x8x16LOT.fm - Rev. H 7/04 EN
5
2000 Micron Technology, Inc. All rights reserved.
List of Tables
Truth Table – Current State Bank n - Command to Bank n. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .42
Truth Table – Current State Bank n - Command to Bank m . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .44
IDD Specifications and Conditions (x4, x8; -5B) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .52
IDD Specifications and Conditions (x4, x8; -6/-6T/-75E/-75Z/-75) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .53
IDD Specifications and Conditions (x16; -5B) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .54
IDD Specifications and Conditions (x16; -6/-6T/-75E/-75Z/-75) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .55
IDD Test Cycle Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .56
Electrical Characteristics & Recommended AC Operating Conditions (-5B) . . . . . . . . . . . . . . . . . . . .57
Electrical Characteristics and Recommended AC Operating Conditions (-6/-6T/-75E) . . . . . . . . . .58
Electrical Characteristics and Recommended AC Operating Conditions (-75Z/-75) . . . . . . . . . . . . .59
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