参数资料
型号: MT46V32M16BN-5BLIT
元件分类: DRAM
英文描述: 32M X 16 DDR DRAM, 0.7 ns, PBGA60
封装: 10 X 12.50 MM, LEAD FREE, PLASTIC, FBGA-60
文件页数: 52/82页
文件大小: 2855K
代理商: MT46V32M16BN-5BLIT
512Mb: x4, x8, x16
DDR SDRAM
09005aef80a1d9e7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512MBDDRx4x8x16_2.fm - Rev. H 7/04 EN
56
2000 Micron Technology, Inc. All rights reserved.
Table 22:
IDD Test Cycle Times
Values reflect number of clock cycles for each test.
IDD TEST
SPEED
GRADE
CLOCK
CYCLE TIME
tRRD
tRCD
tRAS
tRP
tRC
tRFC
tREFI
CL
IDD0
-75/75Z
7.5ns
NA
6
3
9
NA
-75E
7.5ns
NA
6
2
8
NA
-6/-6T
6ns
NA
7
3
10
NA
-5B
5ns
NA
8
3
11
NA
IDD1
-75
7.5ns
NA
6
3
9
NA
2.5
-75Z
7.5ns
NA
6
3
9
NA
2
-75E
7.5ns
NA
6
2
8
NA
2
-6/-6T
6ns
NA
7
3
10
NA
2.5
-5B
5ns
NA
3
IDD4R
-75
7.5ns
NA
2.5
-75Z
7.5ns
NA
2
-75E
7.5ns
NA
2
-6/-6T
6ns
NA
2.5
-5B
5ns
NA
3
IDD4W
-75
7.5ns
NA
-75Z
7.5ns
NA
-75E
7.5ns
NA
-6/-6T
6ns
NA
-5B
5ns
NA
IDD5
-75/75Z
7.5ns
NA
10
NA
-75E
7.5ns
NA
9
NA
-6/-6T
6ns
NA
12
NA
-5B
5ns
NA
14
NA
IDD5A
-75/75Z
7.5ns
NA
10
1,030
NA
-75E
7.5ns
NA
9
1,030
NA
-6/-6T
6ns
NA
12
1,288
NA
-5B
5ns
NA
14
1,546
NA
IDD7
-75
7.5ns
2/4
3
NA
3
10
NA
2.5
-75Z
7.5ns
2/4
3
NA
3
10
NA
2
-75E
7.5ns
2
3
NA
2
8
NA
2
-6/-6T
6ns
2/4
3
NA
3
10
NA
2.5
-5B
5ns
2/4
3
NA
3
11
NA
3
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