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| 型号： | MT48V4M32LFFC |
| 厂商： | Micron Technology, Inc. |
| 英文描述： | SYNCHRONOUS DRAM |
| 中文描述： | 同步DRAM |
| 文件页数： | 19/61页 |
| 文件大小： | 1400K |
| 代理商： | MT48V4M32LFFC |
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19
128Mb: x16, x32 Mobile SDRAM
MobileY95W_3V_F.p65 – Rev. F; Pub. 9/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
128Mb: x16, x32
MOBILE SDRAM
ADVANCE
This is shown in Figure 7 for CAS latencies of two and
three; data element
n
+ 3 is either the last of a burst of four
or the last desired of a longer burst. The 128Mb SDRAM
uses a pipelined architecture and therefore does not
require the 2
n
rule associated with a prefetch architec-
Figure 7
Consecutive READ Bursts
ture. A READ command can be initiated on any clock
cycle following a previous READ command. Full-speed
random read accesses can be performed to the same
bank, as shown in Figure 8, or each subsequent READ
may be performed to a different bank.
CLK
DQ
D
OUT
n
T2
T1
T4
T3
T5
T0
COMMAND
ADDRESS
READ
NOP
NOP
NOP
BANK,
COL
n
NOP
BANK,
COL
b
D
OUT
n
+ 1
D
OUT
n
+ 2
D
OUT
n
+ 3
D
OUT
b
READ
X
= 0 cycles
NOTE:
Each READ command may be to either bank. DQM is LOW.
CAS Latency = 1
CLK
DQ
D
OUT
n
T2
T1
T4
T3
T6
T5
T0
COMMAND
ADDRESS
READ
NOP
NOP
NOP
NOP
BANK,
COL
n
NOP
BANK,
COL
b
D
OUT
n
+ 1
D
OUT
n
+ 2
D
OUT
n
+ 3
D
OUT
b
READ
X
= 1 cycle
CAS Latency = 2
CLK
DQ
D
OUT
n
T2
T1
T4
T3
T6
T5
T0
COMMAND
ADDRESS
READ
NOP
NOP
NOP
NOP
BANK,
COL n
NOP
BANK,
COL
b
D
OUT
n
+ 1
D
OUT
n
+ 2
D
OUT
n
+ 3
D
OUT
b
READ
NOP
T7
X
= 2 cycles
CAS Latency = 3
DON’T CARE
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