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参数资料
| 型号： | MT48V4M32LFFC |
| 厂商： | Micron Technology, Inc. |
| 英文描述： | SYNCHRONOUS DRAM |
| 中文描述： | 同步DRAM |
| 文件页数： | 38/61页 |
| 文件大小： | 1400K |
| 代理商： | MT48V4M32LFFC |
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38
128Mb: x16, x32 Mobile SDRAM
MobileY95W_3V_F.p65 – Rev. F; Pub. 9/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
128Mb: x16, x32
MOBILE SDRAM
ADVANCE
CAPACITANCE
(Note: 2; notes appear on page 39)
PARAMETER
Input Capacitance: CLK
Input Capacitance: All other input-only pins
Input/Output Capacitance: DQs
SYMBOL
C
I
1
C
I
2
C
IO
MIN
2.5
2.5
4.0
MAX
3.5
3.8
6.0
UNITS
pF
pF
pF
NOTES
29
30
31
MAX
-8
150
I
DD
SPECIFICATIONS AND CONDITIONS (x32)
(Notes: 1, 5, 6, 11, 13; notes appear on page 39; V
DD
= +3.3V ±0.3V or 2.5 ±0.2V, V
DD
Q = +3.3V ±0.3V or +2.5V
±0.2V or +1.8V ±0.15V )
PARAMETER/CONDITION
Operating Current: Active Mode;
Burst = 2; READ or WRITE;
t
RC =
t
RC (MIN)
Standby Current: Power-Down Mode;
All banks idle; CKE = LOW
Standby Current: Active Mode;
CKE = HIGH; CS# = HIGH; All banks active after
t
RCD met;
No accesses in progress
Operating Current: Burst Mode; Page burst;
READ or WRITE; All banks active
Auto Refresh Current
CKE = HIGH; CS# = HIGH
SYMBOL
I
DD
1
-10
120
UNITS NOTES
mA
3, 18,
19, 32
32
I
DD
2
350
350
μA
I
DD
3
40
35
mA
3, 12,
19, 32
I
DD
4
115
110
mA
3, 18,
19, 32
3, 12,
18, 19,
32, 33
t
RFC =
t
RFC (MIN)
t
RFC = 15.625μs
I
DD
5
I
DD
6
220
3
180
3
mA
mA
I
DD
7
- SELF REFRESH CURRENT OPTIONS (x32)
(Notes: Note 4 appears on page 39) (V
DD
= +3.3V ±0.3V or 2.5 ±0.2V, V
DD
Q) = +3.3V ±0.3V or +2.5V ±0.2V or
+1.8V ±0.15V)
Temperature Compensated Self Refresh
Parameter/Condition
Max
-8 and -10
UNITS
NOTES
Temperature
85
o
C
70
o
C
45
o
C
15
o
C
Self Refresh Current:
1000
μA
4
CKE < 0.2V
550
μA
4
400
μA
4
350
μA
4
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