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参数资料
| 型号： | MT48V4M32LFFC |
| 厂商： | Micron Technology, Inc. |
| 英文描述： | SYNCHRONOUS DRAM |
| 中文描述： | 同步DRAM |
| 文件页数： | 32/61页 |
| 文件大小： | 1400K |
| 代理商： | MT48V4M32LFFC |
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32
128Mb: x16, x32 Mobile SDRAM
MobileY95W_3V_F.p65 – Rev. F; Pub. 9/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
128Mb: x16, x32
MOBILE SDRAM
ADVANCE
NOTE (continued):
5. The following states must not be interrupted by any executable command; COMMAND INHIBIT or NOP commands
must be applied on each positive clock edge during these states.
Refreshing: Starts with registration of an AUTO REFRESH command and ends when
t
RC is met. Once
t
RC is
met, the SDRAM will be in the all banks idle state.
Accessing Mode
Register: Starts with registration of a LOAD MODE REGISTER command and ends when
t
MRD has been
met. Once
t
MRD is met, the SDRAM will be in the all banks idle state.
Precharging All: Starts with registration of a PRECHARGE ALL command and ends when
t
RP is met. Once
t
RP is
met, all banks will be in the idle state.
6. All states and sequences not shown are illegal or reserved.
7. Not bank-specific; requires that all banks are idle.
8. May or may not be bank-specific; if all banks are to be precharged, all must be in a valid state for precharging.
9. Not bank-specific; BURST TERMINATE affects the most recent READ or WRITE burst, regardless of bank.
10. READs or WRITEs listed in the Command (Action) column include READs or WRITEs with auto precharge enabled and
READs or WRITEs with auto precharge disabled.
11. Does not affect the state of the bank and acts as a NOP to that bank.
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