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128Mb: x16, x32 Mobile SDRAM
MobileY95W_3V_F.p65 – Rev. F; Pub. 9/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
128Mb: x16, x32
MOBILE SDRAM
ADVANCE
WRITE – DQM OPERATION
1
DON’T CARE
tCH
tCL
tCK
tRCD
DQMU, DQML
CKE
CLK
A0-A9, A11
DQ
BA0, BA1
A10
tCMS
tAH
tAS
ROW
BANK
ROW
BANK
ENABLE AUTO PRECHARGE
D
IN
m
+ 3
tDH
tDS
D
IN
m
D
IN
m
+ 2
tCMH
COMMAND
NOP
NOP
NOP
ACTIVE
NOP
WRITE
NOP
NOP
tCMS
tCMH
tDH
tDS
tDH
tDS
tAH
tAS
tAH
tAS
DISABLE AUTO PRECHARGE
tCKH
tCKS
COLUMN
m
2
T0
T1
T2
T3
T4
T5
T6
T7
NOTE:
1. For this example, the burst length = 4.
2. x16: A9 and A11 = “Don’t Care”
x32: A8, A9,and A11 = “Don’t Care”
*CAS latency indicated in parentheses.
-8
-10
SYMBOL*
t
CKH
t
CKS
t
CMH
t
CMS
t
DH
t
DS
t
RCD
MIN
1
2.5
1
2.5
1
2.5
20
MAX
MIN
1
2.5
1
2.5
1
2.5
20
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns
TIMING PARAMETERS
-8
-10
SYMBOL*
t
AH
t
AS
t
CH
t
CL
t
CK (3)
t
CK (2)
t
CK (1)
MIN
1
2.5
3
3
8
10
20
MAX
MIN
1
2.5
3
3
10
12
25
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns