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| 型号： | MT48V4M32LFFC |
| 厂商： | Micron Technology, Inc. |
| 英文描述： | SYNCHRONOUS DRAM |
| 中文描述： | 同步DRAM |
| 文件页数： | 4/61页 |
| 文件大小： | 1400K |
| 代理商： | MT48V4M32LFFC |
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128Mb: x16, x32 Mobile SDRAM
MobileY95W_3V_F.p65 – Rev. F; Pub. 9/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
128Mb: x16, x32
MOBILE SDRAM
ADVANCE
TABLE OF CONTENTS
Functional Block Diagram – 8 Meg x 16 ................
Functional Block Diagram – 4 Meg x 32 ................
54-Ball Pin Descriptions .........................................
90-Ball Pin Descriptions .........................................
5
6
7
8
Functional Description
.........................................
Initialization ......................................................
Register Definition ............................................
mode register................................................
Burst Length............................................
Burst Type ...............................................
CAS Latency ............................................
Operating Mode ......................................
Extended Mode Register .........................
Temperature Compensated Self Refresh .
Partial Array Self Refresh.........................
Commands .............................................................
Truth Table 1 (Commands and DQM Operation)
............
Command Inhibit .............................................
No Operation (NOP)..........................................
Load mode register ............................................
Active ................................................................
Read
................................................................
Write ................................................................
Precharge ...........................................................
Auto Precharge ..................................................
Burst Terminate .................................................
Auto Refresh ......................................................
Self Refresh ........................................................
Operation................................................................
Bank/Row Activation ........................................
Reads ................................................................
Writes ................................................................
Precharge ...........................................................
Concurrent Auto Precharge ..............................
Power-Down ......................................................
Clock Suspend ...................................................
Burst Read/Single Write ....................................
9
9
9
9
9
10
11
11
12
12
13
14
14
15
15
15
15
15
15
15
15
15
16
16
17
17
18
24
26
28
26
27
27
Truth Table 2 (CKE)
................................................
Truth Table 3 (Current State, Same Bank)
.....................
Truth Table 4 (Current State, Different Bank)
.................
Absolute Maximum Ratings ...................................
DC Electrical Characteristics
and Operating Conditions ...................................
30
31
33
35
35
AC Electrical Characteristics and Recommended
Operating Conditions
(Timing Table).............
AC Functional Characteristics................................
I
DD
Specifications and Conditions .........................
Capacitance ............................................................
36
37
37
38
Timing Waveforms
Initialize and Load mode register......................
Power-Down Mode ............................................
Clock Suspend Mode .........................................
Auto Refresh Mode ............................................
Self Refresh Mode ..............................................
Reads
Read – Without Auto Precharge...................
Read – With Auto Precharge ........................
Single Read – Without Auto Precharge ........
Single Read – With Auto Precharge .............
Alternating Bank Read Accesses...................
Read – Full-Page Burst ..................................
Read – DQM Operation................................
Writes
Write – Without Auto Precharge .................
Write – With Auto Precharge .......................
Single Write – Without Auto Precharge.......
Single Write – With Auto Precharge ............
Alternating Bank Write Accesses .................
Write – Full-Page Burst .................................
Write – DQM Operation ..............................
54-Ball VFBGA Drawing ...............................
90-Ball FBGA Drawing .................................
FBGA/VFBGA Device Marking .....................
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
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