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参数资料
| 型号： | MT48V4M32LFFC |
| 厂商： | Micron Technology, Inc. |
| 英文描述： | SYNCHRONOUS DRAM |
| 中文描述： | 同步DRAM |
| 文件页数： | 25/61页 |
| 文件大小： | 1400K |
| 代理商： | MT48V4M32LFFC |
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25
128Mb: x16, x32 Mobile SDRAM
MobileY95W_3V_F.p65 – Rev. F; Pub. 9/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
128Mb: x16, x32
MOBILE SDRAM
ADVANCE
least one clock plus time, regardless of frequency.
In addition, when truncating a WRITE burst, the DQM
signal must be used to mask input data for the clock edge
prior to, and the clock edge coincident with, the
PRECHARGE command. An example is shown in Figure
18. Data
n
+ 1 is either the last of a burst of two or the last
desired of a longer burst. Following the PRECHARGE
command, a subsequent command to the same bank
cannot be issued until
t
RP is met.
In the case of a fixed-length burst being executed to
completion, a PRECHARGE command issued at the opti-
mum time (as described above) provides the same op-
eration that would result from the same fixed-length
burst with auto precharge. The disadvantage of the
PRECHARGE command is that it requires that the com-
mand and address buses be available at the appropriate
time to issue the command; the advantage of the
PRECHARGE command is that it can be used to truncate
fixed-length or full-page bursts.
Figure 18
WRITE to PRECHARGE
DQM
CLK
DQ
T2
T1
T4
T3
T0
COMMAND
ADDRESS
BANK
a
,
COL
n
T5
NOP
WRITE
PRECHARGE
NOP
NOP
D
IN
n
D
IN
n
+ 1
ACTIVE
tRP
or all)
(
a
t
WR
BANK
a
,
ROW
DQM
DQ
COMMAND
ADDRESS
BANK
a
,
COL n
NOP
WRITE
PRECHARGE
NOP
NOP
D
IN
n
D
IN
n
+ 1
ACTIVE
tRP
DON’T CARE
BANK
(
a
or all)
t
WR
NOTE:
DQM could remain LOW in this example if the WRITE burst is a fixed length
of two.
BANK
a
,
ROW
T6
NOP
NOP
t
WR@
t
CK 15ns
t
WR@
t
CK < 15ns
Data for any WRITE burst may be truncated with a
subsequent READ command, and data for a fixed-length
WRITE burst may be immediately followed by a READ
command. Once the READ command is registered, the
data inputs will be ignored, and WRITEs will not be
executed. An example is shown in Figure 17. Data
n
+ 1 is
either the last of a burst of two or the last desired of a
longer burst.
Data for a fixed-length WRITE burst may be followed
by, or truncated with, a PRECHARGE command to the
same bank (provided that auto precharge was not acti-
vated), and a full-page WRITE burst may be truncated
with a PRECHARGE command to the same bank. The
PRECHARGE command should be issued
t
WR after the
clock edge at which the last desired input data element is
registered. The auto precharge mode requires a
t
WR of at
Figure 17
WRITE to READ
CLK
DQ
T2
T1
T3
T0
COMMAND
ADDRESS
NOP
WRITE
BANK,
COL
n
D
IN
n
D
IN
n
+ 1
D
OUT
b
READ
NOP
NOP
BANK,
COL
b
NOP
D
OUT
b
+ 1
T4
T5
NOTE:
The WRITE command may be to any bank, and the READ command may
be to any bank. DQM is LOW. CAS latency = 2 for illustration.
Figure 16
Random WRITE Cycles
CLK
DQ
D
IN
n
T2
T1
T3
T0
COMMAND
ADDRESS
WRITE
BANK,
COL
n
D
IN
a
D
IN
x
D
IN
m
WRITE
WRITE
WRITE
BANK,
COL
a
BANK,
COL
x
BANK,
COL
m
NOTE:
Each WRITE command may be to any bank.
DQM is LOW.
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