52
128Mb: x16, x32 Mobile SDRAM
MobileY95W_3V_F.p65 – Rev. F; Pub. 9/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
128Mb: x16, x32
MOBILE SDRAM
ADVANCE
WRITE – WITHOUT AUTO PRECHARGE
1
DISABLE AUTO PRECHARGE
ALL BANKS
tCH
tCL
tCK
tRP
tRAS
tRC
tRCD
DQMU, DQML
CKE
CLK
A0-A9, A11
DQ
BA0, BA1
A10
tCMH
tCMS
tAH
tAS
ROW
ROW
BANK
BANK
BANK
ROW
ROW
BANK
tWR
D
IN
m
tDH
tDS
D
IN
m
+ 1
D
IN
m
+ 2
D
IN
m
+ 3
COMMAND
tCMH
tCMS
NOP
NOP
NOP
ACTIVE
NOP
WRITE
NOP
PRECHARGE
ACTIVE
tAH
tAS
tAH
tAS
tDH
tDS
tDH
tDS
tDH
tDS
SINGLE BANK
tCKH
tCKS
COLUMN
m
3
2
T0
T1
T2
T4
T3
T5
T6
T7
T8
DON’T CARE
T9
NOP
NOTE:
1. For this example, the burst length = 4, and the WRITE burst is followed by a “manual” PRECHARGE.
2. 15ns is required between <D
IN
m
+ 3> and the PRECHARGE command, regardless of frequency.
3. x16: A9 and A11 = “Don’t Care”
x32: A8, A9,and A11 = “Don’t Care”
*CAS latency indicated in parentheses.
-8
-10
SYMBOL*
t
CMH
t
CMS
t
DH
t
DS
t
RAS
t
RC
t
RCD
t
RP
t
WR
MIN
1
2.5
1
2.5
48
80
20
20
15
MAX
MIN
1
2.5
1
2.5
50
100
20
20
15
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
120,000
120,000
TIMING PARAMETERS
-8
-10
SYMBOL*
t
AH
t
AS
t
CH
t
CL
t
CK (3)
t
CK (2)
t
CK (1)
t
CKH
t
CKS
MAX
1
2.5
3
3
8
10
20
1
2.5
MIN
MAX
1
2.5
3
3
10
12
25
1
2.5
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns