36
128Mb: x16, x32 Mobile SDRAM
MobileY95W_3V_F.p65 – Rev. F; Pub. 9/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
128Mb: x16, x32
MOBILE SDRAM
ADVANCE
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Notes: 5, 6, 8, 9, 11; notes appear on page 39)
AC CHARACTERISTICS
PARAMETER
Access time from CLK (pos. edge)
-8
-10
SYMBOL
t
AC (3)
t
AC (2)
t
AC (1)
t
AH
t
AS
t
CH
t
CL
t
CK (3)
t
CK (2)
t
CK (1)
t
CKH
t
CKS
t
CMH
t
CMS
t
DH
t
DS
t
HZ (3)
t
HZ (2)
t
HZ (1)
t
LZ
t
OH
t
OH
N
t
RAS
t
RC
t
RCD
t
REF
t
RFC
t
RP
t
RRD
t
T
t
WR
MIN
MAX
7
8
19
MIN
MAX
7
8
22
UNITS NOTES
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
–
CL = 3
CL = 2
CL = 1
27
Address hold time
Address setup time
CLK high-level width
CLK low-level width
Clock cycle time
1
1
2.5
3
3
8
10
20
1
2.5
1
2.5
1
2.5
2.5
3
3
10
12
25
1
2.5
1
2.5
1
2.5
CL = 3
CL = 2
CL = 1
23
23
23
CKE hold time
CKE setup time
CS#, RAS#, CAS#, WE#, DQM hold time
CS#, RAS#, CAS#, WE#, DQM setup time
Data-in hold time
Data-in setup time
Data-out high-impedance time
CL = 3
CL = 2
CL = 1
7
8
19
7
8
22
10
10
10
Data-out low-impedance time
Data-out hold time (load)
Data-out hold time (no load)
ACTIVE to PRECHARGE command
ACTIVE to ACTIVE command period
ACTIVE to READ or WRITE delay
Refresh period (4,096 rows)
AUTO REFRESH period
PRECHARGE command period
ACTIVE bank
a
to ACTIVE bank
b
command
Transition time
WRITE recovery time
1
1
2.5
1.8
48
80
20
2.5
1.8
50
100
20
28
120,000
120,000
64
64
80
20
20
0.5
100
20
20
0.5
1.2
1.2
7
24
1 CLK +
7ns
15
80
1 CLK +
5ns
15
100
ns
ns
25
20
Exit SELF REFRESH to ACTIVE command
t
XSR
AC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(V
DD
= +3.3V ±0.3V or 2.5 ±0.2V, V
DD
Q = +3.3V ±0.3V or +2.5V ±0.2V or +1.8V ±0.15V )
PARAMETER/CONDITION
Input High Voltage: Logic 1; All inputs
SYMBOL
V
IH
MIN
1.4
MAX
–
UNITS NOTES
V
Input Low Voltage: Logic 0; All inputs
V
IL
–
0.4
V