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参数资料
| 型号： | MT48V4M32LFFC |
| 厂商： | Micron Technology, Inc. |
| 英文描述： | SYNCHRONOUS DRAM |
| 中文描述： | 同步DRAM |
| 文件页数： | 35/61页 |
| 文件大小： | 1400K |
| 代理商： | MT48V4M32LFFC |
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35
128Mb: x16, x32 Mobile SDRAM
MobileY95W_3V_F.p65 – Rev. F; Pub. 9/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
128Mb: x16, x32
MOBILE SDRAM
ADVANCE
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS - LC VERSION
(Notes: 1, 5, 6; notes appear on page 39; V
DD
= +3.3V ±0.3V, V
DD
Q = +3.3V ±0.3V
PARAMETER/CONDITION
Supply Voltage
I/O Supply Voltage
Input High Voltage: Logic 1; All inputs
SYMBOL
V
DD
V
DD
Q
V
IH
MIN
3
3
2
MAX
3.6
3.6
V
DD
+ 0.3
UNITS NOTES
V
V
V
22
Input Low Voltage: Logic 0; All inputs
Data Output High Voltage: Logic 1; All inputs
Data Output LOW Voltage: LOGIC 0; All inputs
Input Leakage Current:
Any Input 0V
≤
V
IN
≤
V
DD
(All other pins not under test = 0V)
Output Leakage Current: DQs are disabled; 0V
≤
V
OUT
≤
V
DD
Q
V
IL
V
OH
V
OL
I
I
-0.3
2.4
–
-5
0.8
–
0.4
5
V
V
V
22
μA
I
OZ
-5
5
μA
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS - V VERSION
(Notes: 1, 5, 6; notes appear on page 39; V
DD
= 2.5 ±0.2V, V
DD
Q = +2.5V ±0.2V or +1.8V ±0.15V )
PARAMETER/CONDITION
Supply Voltage
I/O Supply Voltage
SYMBOL
V
DD
V
DD
Q(2.5V)
V
DD
Q(1.8V)
V
IH
V
IL
V
OH
V
OL
I
I
MIN
2.3
2.3
1.65
1.25
-0.3
MAX
2.7
2.7
1.95
V
DD
+ 0.3
+0.55
–
0.2
2
UNITS NOTES
V
V
V
V
V
V
V
μA
Input High Voltage: Logic 1; All inputs
Input Low Voltage: Logic 0; All inputs
Data Output High Voltage: Logic 1; All inputs
Data Output Low Voltage: LOGIC 0; All inputs
Input Leakage Current:
Any input 0V
≤
V
IN
≤
V
DD
(All other pins not under test = 0V)
Output Leakage Current: DQs are disabled; 0V
≤
V
OUT
≤
V
DD
Q
22
22
V
DD
Q - 0.2
–
-2
I
OZ
-5
5
μA
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
DD
/V
DD
Q Supply
Relative to V
SS
(3.3V)............................. -1V to +4.6V
Relative to V
SS
(2.5V) ......................... -0.5V to +3.6V
Voltage on Inputs, NC or I/O Pins
Relative to V
SS
(3.3V) ............................. -1V to +4.6V
Relative to V
SS
(2.5V) ......................... -0.5V to +3.6V
Operating Temperature,
T
(Industrial) ....................................... -40°C to +85°C
Storage Temperature (plastic)................ -55°C to +150°C
Power Dissipation ..........................................................1W
*Stresses greater than those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the de-
vice. This is a stress rating only, and functional operation
of the device at these or any other conditions above those
indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
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