参数资料
型号: V59C1G01808QALF19E
厂商: PROMOS TECHNOLOGIES INC
元件分类: DRAM
英文描述: 128M X 8 DDR DRAM, BGA68
封装: ROHS COMPLIANT, FBGA-68
文件页数: 10/79页
文件大小: 1028K
代理商: V59C1G01808QALF19E
18
V59C1G01(408/808/168)QA Rev. 1.3 June 2008
ProMOS TECHNOLOGIES
V59C1G01(408/808/168)QA
ODT (on-die termination)
On Die Termination (ODT) is a feature that allows a DRAM to turn on/off termination resistance for each DQ,
DQS/DQS, RDQS/RDQS, and DM signal for x4/x8 configurations via the ODT control pin. For x16 configuration
ODT is applied to each DQ, UDQS/UDQS, LDQS/LDQS, UDM, and LDM signal via the ODT control pin. The
ODT feature is designed to improve signal integrity of the memory channel by allowing the DRAM controller to
independently turn on/off termination resistance for any or all DRAM devices.
The ODT function is supported for ACTIVE and STANDBY modes. ODT is turned off and not supported in SELF
REFRESH mode.
Input
Pin
Input
Buffer
DRAM
VSSQVSSQ
VDDQVDDQ
Rval2
Rval1
sw1
sw2
Selection among sw1, sw2, and sw3 is determined by “Rtt (nominal)” in EMR.
Termination included on all DQs, DM, DQS, DQS, RDQS, and RDQS pins.
Switch (sw1, sw2, sw3) is enabled by ODT pin.
VSSQ
VDDQ
Rval3
sw3
Functional representation of ODT
相关PDF资料
PDF描述
V59C1G01808QALF37E 128M X 8 DDR DRAM, BGA68
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