参数资料
型号: V59C1G01808QALF19E
厂商: PROMOS TECHNOLOGIES INC
元件分类: DRAM
英文描述: 128M X 8 DDR DRAM, BGA68
封装: ROHS COMPLIANT, FBGA-68
文件页数: 47/79页
文件大小: 1028K
代理商: V59C1G01808QALF19E
51
ProMOS TECHNOLOGIES
V59C1G01(408/808/168)QA
V59C1G01(408/808/168)QA Rev. 1.3 June 2008
Active Power-Down Mode Entry and Exit after an Activate Command
Active Power-Down Mode Entry and Exit after a Read Burst: RL = 4 (AL = 1, CL =3), BL = 4
note: Active Power-Down mode exit timing tXARD (“fast exit”) or tXARDS (“slow exit”) depends on the programmed
state in the MRS, address bit A12.
NOP
Activate
T0
T2
T1
CMD
NOP
Tn
Tn+1
CKE
Active
Power-Down
Entry
NOP
Act.PD 0
tIS
Tn+2
tIS
Active
Power-Down
Exit
Valid
Command
tXARD or
tXARDS *)
CK, CK
note: Active Power-Down mode exit timing tXARD (“fast exit”) or tXARDS (“slow exit”) depends on the programmed
state in the MRS, address bit A12.
NOP
READ
T0
T2
T1
T3
T4
T5
T6
T7
T8
Dout A0
Dout A1
Dout A2
Dout A3
RL = 4
CL = 3
CMD
DQ
DQS,
DQS
NOP
Tn
Tn+1
CKE
AL = 1
Active
Power-Down
Entry
RL + BL/2
NOP
Act.PD 1
tIS
Tn+2
tIS
Active
Power-Down
Exit
Valid
Command
tXARD or
tXARDS *)
CK, CK
READ w/AP
相关PDF资料
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V59C1G01808QALF37E 128M X 8 DDR DRAM, BGA68
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