参数资料
型号: V59C1G01808QALF19E
厂商: PROMOS TECHNOLOGIES INC
元件分类: DRAM
英文描述: 128M X 8 DDR DRAM, BGA68
封装: ROHS COMPLIANT, FBGA-68
文件页数: 22/79页
文件大小: 1028K
代理商: V59C1G01808QALF19E
29
ProMOS TECHNOLOGIES
V59C1G01(408/808/168)QA
V59C1G01(408/808/168)QA Rev. 1.3 June 2008
Burst Read Operation: RL = 3 (AL = 0, CL = 3, BL = 8)
CMD
NOP
DQ’s
NOP
READ A
T0
T2
T1
T3
T4
T5
T6
T7
T8
Dout A0
Dout A1
Dout A2
Dout A3
RL = 3
CL = 3
NOP
<= tDQSCK
BRead303
DQS,
DQS
Dout A4
Dout A5
Dout A6
Dout A7
CK, CK
Burst Read followed by Burst Write : RL = 5, WL = (RL-1) = 4, BL = 4
NOP
Posted CAS
WRITE A
NOP
READ A
Posted CAS
T0
T1
Dout A0
Dout A1
Dout A2
Dout A3
RL = 5
NOP
CMD
DQ
BRBW514
T3
T4
T5
T6
T7
T8
T9
Din A0
Din A1
Din A2
Din A3
DQS,
DQS
WL = RL - 1 = 4
BL/2 + 2
CK, CK
The minimum time from the burst read command to the burst write command is defined by a read-to-write
turn-around time, which is BL/2 + 2 clocks.
相关PDF资料
PDF描述
V59C1G01808QALF37E 128M X 8 DDR DRAM, BGA68
V59C1G01808QAUF37H 128M X 8 DDR DRAM, PBGA68
V59C1512804QALP19A 64M X 8 DDR DRAM, PBGA68
V59C1512804QAUF19AI 64M X 8 DDR DRAM, PBGA68
V59C1512804QAUP19AH 64M X 8 DDR DRAM, PBGA68
相关代理商/技术参数
参数描述
V5A010CB 制造商:Honeywell Sensing and Control 功能描述:MICROSWITCH V5 PIN PLUNGER
V5A010CB 制造商:Honeywell Sensing and Control 功能描述:MICROSWITCH V5 PIN PLUNGER
V5A010CB4D 制造商:Honeywell Sensing and Control 功能描述:MICROSWITCH V5 ROLLER LEVER
V5A010CB4D 制造商:Honeywell Sensing and Control 功能描述:MICROSWITCH V5 ROLLER LEVER
V5A010CB4E 制造商:Honeywell Sensing and Control 功能描述:MICROSWITCH V5 ROLLER LEVER