参数资料
型号: V59C1G01808QALF19E
厂商: PROMOS TECHNOLOGIES INC
元件分类: DRAM
英文描述: 128M X 8 DDR DRAM, BGA68
封装: ROHS COMPLIANT, FBGA-68
文件页数: 41/79页
文件大小: 1028K
代理商: V59C1G01808QALF19E
46
V59C1G01(408/808/168)QA Rev. 1.3 June 2008
ProMOS TECHNOLOGIES
V59C1G01(408/808/168)QA
NOP
Bank A
Activate
NOP
WRITE A
Posted CAS
T0
T3
T4
T5
T6
T7
T12
NOP
CMD
DQ
BW-AP423
A10 ="high"
tRP
Auto-Precharge Begins
DIN A0 DIN A1 DIN A2 DIN A3
WL = RL-1 = 4
WR
>=tRC
T9
T8
Completion of the Burst Write
DQS,
DQS
tDAL
>=tRAS
CK, CK
Burst Write with Auto-Precharge (WR+tRP Limit): WL=4, tDAL=6(WR=3, tRP=3), BL=4
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