参数资料
型号: V59C1G01808QALF19E
厂商: PROMOS TECHNOLOGIES INC
元件分类: DRAM
英文描述: 128M X 8 DDR DRAM, BGA68
封装: ROHS COMPLIANT, FBGA-68
文件页数: 42/79页
文件大小: 1028K
代理商: V59C1G01808QALF19E
47
ProMOS TECHNOLOGIES
V59C1G01(408/808/168)QA
V59C1G01(408/808/168)QA Rev. 1.3 June 2008
Concurrent Auto-Precharge
DDR2 devices support the “concurrent Auto-Precharge” feature. A read with Auto-Precharge enabled, or a
write with Auto-Precharge enabled, may be followed by any command to the other bank, as long as that com-
mand does not interrupt the read or write data transfer, and all other related limitations (e.g. contention
between Read data and Write data must be avoided externally and on the internal data bus.
The minimum delay from a read or write command with Auto-Precharge enabled, to a command to a different
bank, is summarized in the table below. As defined, the WL = RL - 1 for DDR2 devices which allows the com-
mand gap and corresponding data gaps to be minimized.
From Command
To Command
(different bank,
non-interrupting command)
Minimum Delay with
Concurrent Auto-Pre-
charge Support
Units
WRITE w/AP
Read or Read w/AP
(CL -1) + (BL/2) + tWTR
tCK
Write ot Write w/AP
BL/2
tCK
Precharge or Activate
1
tCK
Read w/AP
Read or Read w/AP
BL/2
tCK
Write or Write w/AP
BL/2 + 2
tCK
Precharge or Activate
1
tCK
相关PDF资料
PDF描述
V59C1G01808QALF37E 128M X 8 DDR DRAM, BGA68
V59C1G01808QAUF37H 128M X 8 DDR DRAM, PBGA68
V59C1512804QALP19A 64M X 8 DDR DRAM, PBGA68
V59C1512804QAUF19AI 64M X 8 DDR DRAM, PBGA68
V59C1512804QAUP19AH 64M X 8 DDR DRAM, PBGA68
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